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参数资料
| 型号： | APTM50DSKM65T3 |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 5/6页 |
| 文件大小： | 320K |
| 代理商： | APTM50DSKM65T3 |
APTM50DSKM65T3
A
P
T
M
50D
SK
M
65T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
5 – 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
ra
in
to
S
o
ur
ce
B
re
ak
dow
n
V
o
lt
a
g
e(
N
o
rm
a
li
ze
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
ra
in
t
o
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID= 25.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
255075 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Thr
e
s
h
o
ld
V
o
lt
a
g
e
(N
or
m
a
li
ze
d)
Maximum Safe Operating Area
10 ms
1 ms
100 us
100 ms
0.1
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
1020304050
VDS, Drain to Source Voltage (V)
C
,C
apa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
14
0
255075
100 125 150 175
Gate Charge (nC)
V
GS
,G
a
te
t
o
So
u
rc
e
Vo
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=51A
TJ=25°C
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相关代理商/技术参数 |
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|---|---|
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