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参数资料
| 型号： | APTM50DSKM65T3 |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 500 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 6/6页 |
| 文件大小： | 320K |
| 代理商： | APTM50DSKM65T3 |
APTM50DSKM65T3
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2004
APT website – http://www.advancedpower.com
6 – 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.4
0.60.8
1
1.2
1.41.6
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
o
ff
)(n
s
)
VDS=333V
RG=3
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
10
20
30
40
50
60
70
80
ID, Drain Current (A)
t r
a
nd
t f(n
s
)
VDS=333V
RG=3
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
10
20
30
40
50
60
70
80
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=3
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
0
5
10 15 20 25 30 35 40 45
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=51A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10
15
20
25
30
35
40
45
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=3
TJ=125°C
TC=75°C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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