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参数资料
| 型号： | APTM50UM19SG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 286K |
| 代理商： | APTM50UM19SG |
APTM50UM19S
A
PT
M
50U
M
19S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS= 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 81.5A
19
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
22.4
Coss
Output Capacitance
4.8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.36
nF
Qg
Total gate Charge
492
Qgs
Gate – Source Charge
132
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 163A
260
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 163A
RG = 1
W
77
ns
Eon
Turn-on Switching Energy
u
3020
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
2904
J
Eon
Turn-on Switching Energy
u
4964
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 163A, RG = 1
3384
J
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
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