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参数资料
| 型号： | APTML20UM18R010T1AG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 44 A, 200 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 105K |
| 代理商： | APTML20UM18R010T1AG |
APTML20UM18R010T1AG
APT
M
L
20UM
18R010T
1AG
–
Rev
0
October
,2009
www.microsemi.com
2 – 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VDS = 200V ; VGS = 0V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VDS = 160V ; VGS = 0V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 50A
18
19
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
9880
Coss
Output Capacitance
2320
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
700
pF
Shunt Electrical Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Rsh
Resistance value
10
m
Ω
Tsh
Tolerance
2
%
TC=25°C
20
Psh
Load capacity
TC=80°C
10
W
TC=25°C
44
Ish
Current capacity
TC=80°C
31
A
Temperature sensor PTC
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
1980
2020
Ω
R100/R25
Resistance ratio
Tamb=100°C & 25°C
1.676
1.696
1.716
R-55/R25
Resistance ratio
Tamb=-55°C & 25°C
0.48
0.49
0.50
B
Temperature coefficient
7900
ppm/K
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
MOSFET
0.26
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque
Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
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