参数资料
型号: ARF1510
元件分类: 功率晶体管
英文描述: 4 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件页数: 1/2页
文件大小: 83K
代理商: ARF1510
050-4926
Rev
B
1-2005
D1
S1D2
G1
G2
S2
D3
G3
S3D4
G4
S4
MAXIMUM RATINGS
All Ratings Per Die: T
C = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
isolation
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 A)
On State Drain Voltage 1 (I
D(ON) = 3.25A, VGS = 10V)
Zero Gate Voltage Drain Current (V
DS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Forward Transconductance (V
DS = 25V, ID = 3.25A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
MIN
TYP
MAX
1000
6.8
7.5
25
250
±100
34
2500
35
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF 1510
1000
6.5
±30
1500
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
FULL-BRIDGE
400V
750W
40MHz
The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation
in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.
Specified 300 Volt, 27.12 MHz Characteristics:
Output Power = 750 Watts.
Gain = 17dB (Class D)
Efficiency > 80%
High Performance Power RF Package.
Very High Breakdown for Improved Ruggedness.
LowThermalResistance.
Nitride Passivated Die for Improved Reliability.
ARF1510
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic (per package unless otherwise noted)
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.12
0.08
UNIT
°C/W
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ARF1510
D1
S1D2
G1
G2
S2
D3
G3
S3D4
G4
S4
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