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| 型号： | ARD00354 |
| 厂商： | Microchip Technology |
| 文件页数： | 27/50页 |
| 文件大小： | 0K |
| 描述： | BOARD REF DESIGN MCP6N11/MCP6V2X |
| 标准包装： | 1 |
| 每 IC 通道数： | 1 - 单 |
| 放大器类型： | 仪表 |
| 输出类型： | 满摆幅 |
| 电流 - 输出 / 通道： | 30mA |
| 工作温度： | -40°C ~ 125°C |
| 电流供应（主 IC）： | 800µA |
| 板类型： | 完全填充 |
| 已供物品： | 板，线缆 |
| 已用 IC / 零件： | MCP6N11，MCP6001，MCP6V26，MCP6V27，PIC18F2553 |
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2011 Microchip Technology Inc.
DS25073A-page 33
MCP6N11
4.4
Typical Applications
4.4.1
HIGH INPUT IMPEDANCE
DIFFERENCE AMPLIFIER
Figure 4-11 shows the MCP6N11 used as a difference
amplifier. The inputs are high impedance and give good
CMRR performance.
FIGURE 4-11:
Difference Amplifier.
4.4.2
DIFFERENCE AMPLIFIER FOR
VERY LARGE COMMON MODE
SIGNALS
Figure 4-12 shows the MCP6N11 INA used as a
difference amplifier for signals with a very large
common mode component. The input resistor dividers
(R1 and R2) ensure that the voltages at the INA’s inputs
are within their range of normal operation. The
capacitors C1, with the parasitic capacitances C2 (the
resistors’ parasitic capacitance plus the INA’s input
common mode capacitance, CCM), set the same
division ratio, so that high-frequency signals (e.g., a
step in voltage) have the same gain. Select the INA
gain to compensate for R1 and R2’s attenuation. Select
R1 and R2’s tolerances for good CMRR.
FIGURE 4-12:
Difference Amplifier with
Very Large Common Mode Component.
4.4.3
HIGH SIDE CURRENT DETECTOR
Figure 4-13 shows the MCP6N11 INA used as to detect
and amplify the high side current in a battery powered
design. The INA gain is set at 21 V/V, so VOUT changes
210 mV for every 1 mA of IDD current. The best GMIN
option to pick would be a gain of 10 (MCP6N11-010).
FIGURE 4-13:
High Side Current Detector.
4.4.4
WHEATSTONE BRIDGE
shows
the
MCP6N11
single
instrumentation amp used to condition the signal from
a Wheatstone bridge (e.g., strain gage). The overall
INA gain is set at 201 V/V. The best GMIN option to pick,
for this gain, is 100 V/V (MCP6N11-100).
FIGURE 4-14:
Wheatstone Bridge
Amplifier.
VOUT
VIP
VDD
VIM
VREF
VFG
RF
RG
U1
MCP6N11
VOUT
VDD
VREF
VFG
RF
RG
R2
R1
V2
C1
C2
R2
R1
V1
C1
C2
U1
MCP6N11
IDD =
(VBAT –VDD)
(10
Ω)
=
(VOUT –VREF)
(10
Ω) (21.0 V/V)
10
Ω
VDD
IDD
VBAT
+1.8V
to
+5.5V
VOUT
VREF
VFG
RF
RG
200 k
Ω
10 k
Ω
U1
MCP6N11
VOUT
VREF
VFG
RF
RG
200 k
Ω
1k
Ω
VDD
RW1
RW2
RW1
U1
MCP6N11
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