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| 型号： | ARD00354 |
| 厂商： | Microchip Technology |
| 文件页数： | 48/50页 |
| 文件大小： | 0K |
| 描述： | BOARD REF DESIGN MCP6N11/MCP6V2X |
| 标准包装： | 1 |
| 每 IC 通道数： | 1 - 单 |
| 放大器类型： | 仪表 |
| 输出类型： | 满摆幅 |
| 电流 - 输出 / 通道： | 30mA |
| 工作温度： | -40°C ~ 125°C |
| 电流供应（主 IC）： | 800µA |
| 板类型： | 完全填充 |
| 已供物品： | 板，线缆 |
| 已用 IC / 零件： | MCP6N11，MCP6001，MCP6V26，MCP6V27，PIC18F2553 |
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2011 Microchip Technology Inc.
DS25073A-page 7
MCP6N11
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = 25°C, VDD = 1.8V to 5.5V, VSS = GND, EN/CAL =VDD,
VCM = VDD/2, VDM =0V, VREF =VDD/2, VL =VDD/2, RL =10kΩ to VL, CL = 60 pF and GDM =GMIN;
see Figure 1-6 and Figure 1-7.
Parameters
Sym
Min
Typ
Max
Units GMIN
Conditions
EN/CAL Low Specifications
EN/CAL Logic
Threshold, Low
VIL
VSS
—0.2 VDD
Vall
EN/CAL Input Current,
Low
IENL
—
-0.1
—
nA
EN/CAL = 0V
GND Current
ISS
-7
-2.5
—
A
EN/CAL = 0V, VDD =5.5V
Amplifier Output Leakage IO(LEAK)
—
10
—
nA
EN/CAL = 0V
EN/CAL High Specifications
EN/CAL Logic
Threshold, High
VIH
0.8 VDD
VDD
Vall
EN/CAL Input Current,
High
IENH
—
-0.01
—
nA
EN/CAL = VDD
EN/CAL Dynamic Specifications
EN/CAL Input Hysteresis
VHYST
—
0.2
—
Vall
EN/CAL Low to Amplifier
Output High-Z Turn-off
Time
tOFF
—
3
10
s
EN/CAL = 0.2VDD to VOUT = 0.1(VDD/2),
VDMGDM = 1 V, VL =0V
EN/CAL High to
Amplifier Output
On Time
tON
12
20
28
ms
EN/CAL = 0.8VDD to VOUT = 0.9(VDD/2),
VDMGDM = 1 V, VL =0V
EN/CAL Low to
EN/CAL High low time
tENLH
100
—
s
Minimum time before externally
releasing EN/CAL (Note 1)
Amplifier On to
EN/CAL Low Setup Time
tENOL
—100
—
s
POR Dynamic Specifications
VDD ↓ to Output Off
tPHL
—10
—
s
all
VL =0V, VDD = 1.8V to
VPRL –0.1V step,
90% of VOUT change
VDD ↑ to Output On
tPLH
140
250
360
ms
VL =0V, VDD = 0V to VPRH +0.1V step,
90% of VOUT change
Note 1:
For design guidance only; not tested.
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = 1.8V to 5.5V, VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-SOIC
θJA
—150
—
°C/W
Thermal Resistance, 8L-TDFN (2×3)
θJA
—53—
°C/W
Note 1:
Operation must not cause TJ to exceed the Absolute Maximum Junction Temperature specification (+150°C).
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