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参数资料
| 型号： | ARF460A |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 77K |
| 代理商： | ARF460A |
050-5966
Rev
D
7-2003
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
NOT UPDATED
Class C
V
DD
= 150V
P
out
= 150W
30
25
20
15
10
5
0
GAIN
(dB)
DYNAMIC CHARACTERISTICS
ARF460A/B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 1.6
MIN
TYP
MAX
1200
1400
150
300
60
100
7
6
20
4.4
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
η
ψ
Test Conditions
f = 40.68 MHz
V
GS
= 0V
V
DD
= 125V
Pout = 150W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
5
10
50 100
500
16
12
8
4
0
24
6
8
10
CAPACITANCE
(pf)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
5000
1000
500
100
50
10
.1
.5
1
5
10
50
150
I D
,DRAIN
CURRENT
(AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
56
10
5
1
.5
.1
1mS
10mS
100mS
DC
100uS
相关PDF资料 |
PDF描述 |
|---|---|
| ARF460B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461AG | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461BG | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF460AG | 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ARF460B | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE |
| ARF460BG | 功能描述:FET RF N-CH 500V 14A TO247 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ARF461 | 制造商:International Rectifier 功能描述:CONV DC-DC SNGL OUT -50 TO 50VIN - Bulk |
| ARF461/EM | 制造商:International Rectifier 功能描述:CONV DC-DC SNGL OUT -50 TO 50VIN - Bulk |
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