参数资料
型号: ARF460B
元件分类: 功率晶体管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
封装: TO-247, 3 PIN
文件页数: 3/4页
文件大小: 77K
代理商: ARF460B
050-5966
Rev
D
7-2003
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
25
20
15
10
5
0
1
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
ARF460A/B
6.5V
5.5V
6V
7V
VGS=15 & 10V
9V
8V
4.5V
5V
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin ()
Z
OL ()
2.0
13.5
27
40
65
20.9 - j 9.2
2.4 - j 6.8
.57 - j 2.6
.31 - j 0.5
.44 + j 1.9
38 - j 2.6
31 - j 14
19.6 - j 17.6
12.5 - j 15.8
6.0 - j 10.5
Zin - Gate shunted with 25!!
IDQ = 100mA
Z
OL -
Conjugate of optimum load for 150 Watts output at Vdd = 125V
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
0.60
0.50
0.40
0.30
0.20
0.10
0
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相关PDF资料
PDF描述
ARF461AG VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF461BG VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF461B VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
ARF461A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD
AS-10.446875-12-3030-SMD-H30-TR QUARTZ CRYSTAL RESONATOR, 10.446875 MHz
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