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参数资料
| 型号： | ARF461AG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 141K |
| 代理商： | ARF461AG |
050-5987
Rev
D
6-2008
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD = 150V
P
out = 150W
30
25
20
15
10
5
0
GAIN
(dB)
ARF461A/B
1 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specications and information contained herein.
1
10
100
1000
8
6
4
2
0
2
4
6
8
CAP
ACIT
ANCE
(pf)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
5000
1000
500
100
50
10
.1
.5
1
5
10
50
200
I D
,DRAIN
CURRENT
(AMPERES)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
J = -55°C
T
J = -55°C
T
J = +125°C
T
J = +25°C
T
C =+25°C
T
J =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
C
iss
C
oss
C
rss
26
10
5
1
.5
.1
1mS
10mS
100mS
DC
100uS
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
C
ISS
Input Capacitance
V
GS = 0V
V
DS = 50V
f = 1MHz
1700
pF
C
oss
Output Capacitance
175
C
rss
Reverse Transfer Capacitance
50
t
d(on)
Turn-On Delay Time
V
GS = 15V
V
DD = 0.5VDSS
I
D = ID (Cont.) @ 25°C
R
G = 1.6Ω
8
ns
t
r
Rise Time
5
t
d(off)
Turn-off Delay Time
21
t
f
Fall Time
10.1
Functional Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
G
PS
Common Source Amplier Power Gain
f = 40.68MHz
V
GS = 0V
V
DD = 250V
P
OUT = 150W
13
15
dB
η
Drain Efciency
70
75
%
Ψ
Electrical Ruggedness VSWR 10:1
No Degradation in Output Power
相关PDF资料 |
PDF描述 |
|---|---|
| ARF461BG | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| ARF461A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-247AD |
| AS-10.446875-12-3030-SMD-H30-TR | QUARTZ CRYSTAL RESONATOR, 10.446875 MHz |
| AS-32.768-S-F-5050-SMD-H32-TR | QUARTZ CRYSTAL RESONATOR, 32.768 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ARF461B | 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF461BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V TO-247 制造商:Microsemi Corporation 功能描述:ARF461B Series N-Channel 150 W 65 MHz Flange Mount RF Power Mosfet - TO-247-3 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF461CG | 功能描述:RF MOSFET N-CH 1000V TO247 制造商:microsemi corporation 系列:- 包装:散装 零件状态:停產 晶体管类型:N 通道 频率:65MHz 增益:15dB 电压 - 测试:50V 额定电流:25μA 噪声系数:- 功率 - 输出:150W 电压 - 额定:1000V 封装/外壳:TO-247-3 供应商器件封装:TO-247 标准包装:30 |
| ARF462 | 制造商:POSEICO 制造商全称:POSEICO 功能描述:FAST RECOVERY DIODE |
| ARF462A | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE |
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