参数资料
型号: AS7C25512NTD32A-166TQI
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 512K X 32 ZBT SRAM, 3.5 ns, PQFP100
封装: 14 X 20 MM, TQFP-100
文件页数: 13/18页
文件大小: 428K
代理商: AS7C25512NTD32A-166TQI
AS7C25512NTD32A/36A
12/23/04, v 2.2
Alliance Semiconductor
P. 4 of 18
Functional Description
The AS7C25512NTD32A/36A family is a high performance CMOS 16 Mbit synchronous Static Random Access Memory
(SRAM) organized as 524,288 words × 32 or 36 bits and incorporates a LATE LATE Write.
This variation of the 16Mb+ synchronous SRAM uses the No Turnaround Delay (NTD) architecture, featuring an enhanced
write operation that improves bandwidth over pipelined burst devices. In a normal pipelined burst device, the write data,
command, and address are all applied to the device on the same clock edge. If a read command follows this write command,
the system must wait for two 'dead' cycles for valid data to become available. These dead cycles can significantly reduce
overall bandwidth for applications requiring random access or read-modify-write operations.
NTD devices use the memory bus more efficiently by introducing a write latency which matches the two-cycle pipelined or
one-cycle flow-through read latency. Write data is applied two cycles after the write command and address, allowing the read
pipeline to clear. With NTD, write and read operations can be used in any order without producing dead bus cycles.
Assert R/W low to perform write cycles. Byte write enable controls write access to specific bytes, or can be tied low for full
32/36 bit writes. Write enable signals, along with the write address, are registered on a rising edge of the clock. Write data is
applied to the device two clock cycles later. Unlike some asynchronous SRAMs, output enable OE does not need to be toggled
for write operations; it can be tied low for normal operations. Outputs go to a high impedance state when the device is de-
selected by any of the three chip enable inputs. In pipelined mode, a two cycle deselect latency allows pending read or write
operations to be completed.
Use the ADV (burst advance) input to perform burst read, write and deselect operations. When ADV is high, external addresses, chip
select, R/W pins are ignored, and internal address counters increment in the count sequence specified by the LBO control. Any
device operations, including burst, can be stalled using the CEN=1, the clock enable input.
The AS7C25512NTD32A/36A operates with a 2.5V ± 5% power supply for the device core (VDD). These devices are
available in a 100-pin TQFP package.
TQFP capacitance
* Guaranteed not tested
TQFP thermal resistance
Parameter
Symbol
Test conditions
Min
Max
Unit
Input capacitance
CIN*
VIN = 0V
-
5
pF
I/O capacitance
CI/O*
VOUT = 0V
-
7
pF
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)1
1 This parameter is sampled
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
1–layer
θJA
40
°C/W
4–layer
θJA
22
°C/W
Thermal resistance
(junction to top of case)1
θJC
8
°C/W
相关PDF资料
PDF描述
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相关代理商/技术参数
参数描述
AS7C25512NTD32A-166TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 Pipelined SRAM with NTD
AS7C25512NTD36A-133TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 Pipelined SRAM with NTD
AS7C25512NTD36A-133TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 Pipelined SRAM with NTD
AS7C25512NTD36A-133TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 Pipelined SRAM with NTD
AS7C25512NTD36A-133TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:2.5V 512K x 32/36 Pipelined SRAM with NTD