参数资料
型号: AS7C25512PFD36A-133TQIN
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 512K X 36 STANDARD SRAM, 3.8 ns, PQFP100
封装: 14 X 20 MM, LEAD FREE, TQFP-100
文件页数: 16/19页
文件大小: 523K
代理商: AS7C25512PFD36A-133TQIN
AS7C25512PFD32A
AS7C25512PFD36A
2/10/05, v. 1.2
Alliance Semiconductor
6 of 19
Write enable truth table (per byte)
Key: X = don’t care, L = low, H = high, n = a, b, c, d;
BWE, BWn = internal write signal.
Asynchronous Truth Table
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Function
GWE
BWE
BWa
BWb
BWc
BWd
Write All Bytes
L
X
XX
H
L
LLL
L
Write Byte a
H
L
H
Write Byte c and d
H
L
H
L
Read
HHX
XX
X
H
L
HH
Operation
ZZ
OE
I/O Status
Snooze mode
H
X
High-Z
Read
L
Dout
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Interleaved burst address (LBO = 1)
Linear burst address (LBO = 0)
A1 A0
Starting Address
0 0
0 1
1 0
1 1
Starting Address
0 0
0 1
1 0
1 1
First Increment
0 1
0 0
1 1
1 0
First Increment
0 1
1 0
1 1
0 0
Second Increment
1 0
1 1
0 0
0 1
Second Increment
1 0
1 1
0 0
0 1
Third Increment
1 1
1 0
0 1
0 0
Third Increment
1 1
1 0
0 1
1 0
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