参数资料
型号: AS7C33512PFS16A-133BI
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 512K X 16 STANDARD SRAM, 10 ns, PBGA119
封装: 14 X 20 MM, BGA-119
文件页数: 11/14页
文件大小: 370K
代理商: AS7C33512PFS16A-133BI
AS7C33512PFS16A
AS7C33512PFS18A
4/15/02; v.1.5
Alliance Semiconductor
6 of 14
Key: X = Don’t Care, L = Low, H = High.
1See “Write enable truth table” on page 4 for more information.
2
Q in flow through mode
3
For WRITE operation following a READ,
OE must be HIGH before the input data set up time and held HIGH throughout the input hold time.
Synchronous truth table
CE0
CE1
CE2
ADSP
ADSC
ADV
WEn
1
OE
Address
accessed
CLK
Operation
DQ
H
X
L
X
NA
L to H
Deselect
Hi
Z
L
X
L
X
NA
L to H
Deselect
Hi
Z
L
X
H
L
X
NA
L to H
Deselect
Hi
Z
L
X
H
L
X
NA
L to H
Deselect
Hi
Z
L
X
H
L
X
NA
L to H
Deselect
Hi
Z
LH
L
X
L
External
L to H
Begin read
Hi
Z2
LH
L
X
H
External
L to H
Begin read
Hi
Z
LH
L
X
F
L
External
L to H
Begin read
Hi
Z2
LH
L
X
F
H
External
L to H
Begin read
Hi
Z
XX
X
H
L
F
L
Next
L to H
Cont. read
Q
X
H
L
F
H
Next
L to H
Cont. read
Hi
Z
X
H
F
L
Current
L to H
Suspend read
Q
X
H
F
H
Current
L to H
Suspend read
Hi
Z
HX
X
H
L
F
L
Next
L to H
Cont. read
Q
H
X
H
L
F
H
Next
L to H
Cont. read
Hi
Z
H
X
H
F
L
Current
L to H
Suspend read
Q
H
X
H
F
H
Current
L to H
Suspend read
Hi
Z
LH
L
X
T
X
External
L to H
Begin write
D3
X
H
L
T
X
Next
L to H
Cont. write
D
H
X
H
L
T
X
Next
L to H
Cont. write
D
X
H
T
X
Current
L to H
Suspend write
D
H
X
H
T
X
Current
L to H
Suspend write
D
Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
VDD
3.135
3.3
3.465
V
VSS
0.0
3.3V I/O supply
voltage
VDDQ
3.135
3.3
3.465
V
VSSQ
0.0
2.5V I/O supply
voltage
VDDQ
2.35
2.5
2.9
V
VSSQ
0.0
Input voltages1
1 Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.
Address and
control pins
VIH
2.0
VDD + 0.3
V
VIL
–0.52
2 VIL min = –2.0V for pulse width less than 0.2 × tRC.
–0.8
I/O pins
VIH
2.0
VDDQ + 0.3
V
VIL
–0.8
Ambient operating temperature
TA
0–
70
°C
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