参数资料
型号: AS7C3364FT36B-80TQC
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 64K X 36 STANDARD SRAM, 8 ns, PQFP100
封装: 14 X 20 MM, TQFP-100
文件页数: 18/19页
文件大小: 417K
代理商: AS7C3364FT36B-80TQC
AS7C3364FT32B
2/8/05; v.1.2
Alliance Semiconductor
P. 8 of 19
AS7C3364FT36B
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other con-
ditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
PD
–1.8
W
DC output current
IOUT
–50
mA
Storage temperature (plastic)
Tstg
–65
+150
°C
Temperature under bias
Tbias
–65
+135
°C
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
V
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