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参数资料
| 型号： | AS8ER128K32Q-200/XT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| 中文描述： | 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
| 封装： | 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68 |
| 文件页数： | 12/18页 |
| 文件大小： | 550K |
| 代理商： | AS8ER128K32Q-200/XT |
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow, and humidity
(plastics).
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ....................................................................-0.6V to +7.0V
Operating Temperature Range
(1) ..................-55
°C to +125°C
Storage Temperature Range .........................-65
°C to +150°C
Voltage on any Pin Relative to Vss..............-0.5V to +7.0V
(2)
Max Junction Temperature**.......................................+150
°C
Thermal Resistance junction to case (
θ
JC):
Package Type Q...........................................11.3° C/W
Package Type P & PN..................................2.8° C/W
NOTES:
1) Including electrical characteristics and data retention.
2) V
IN
MIN = -3.0V for pulse width < 20ns.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC<T
A<125
oC or -40oC to +85oC; Vcc = 5V + 10%)
NOTE:
1) V
IL (MIN): -1.0V for pulse width < 20ns.
2) All other Signal pins except RES\
PARAMETER
CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input High Voltage
VIH
2.2
VCC +0.3
V
Input High Voltage (RES\)
VH
VCC -0.5
VCC +1.0
V
Input Low Voltage
VIL
-0.3
1
0.8
V
LOW INPUT Leakage(RES\ Signal)
RES\=0V, VCC=5.5V
ILI(RES)
-500
HIGH INPUT Leakage(RES\ Signal)
RES\=5.5V, VCC=5.5V
IHI(RES)
10
INPUT LEAKAGE CURRENT
2
OV < VIN < VCC
ILI
-10
10
OUTPUT LEAKAGE CURRENT
2
Outputs(s) Disabled,
OV < VOUT < VCC
ILO
-10
10
Output High Voltage
IOH = -0.4mA
VOH
2.4
--
V
Output Low Voltage
IOL = 2.1mA
VOL
--
0.4
V
Supply Voltage
VCC
4.5
5.5
V
MAX
CONDITIONS
SYM
-15
UNITS
Iout = 0mA, VCC = 5.5V
Cycle = 1S, Duty = 100%
80
Iout = 0mA, VCC = 5.5V
Cycle = MIN, Duty = 100%
260
CE\ = VCC, VCC = 5.5V
ICC1
1.4
mA
CE\ = VIH, VCC = 5.5V
ICC2
12
mA
Power Supply Current:
Standby
Icc3
mA
PARAMETER
Power Supply Current:
Operating
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相关代理商/技术参数 |
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|---|---|
| AS8ER128K32Q-250/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32QB-150/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| AS8ER128K32QB-150/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
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