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参数资料
| 型号： | AS8ER128K32Q-200/XT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| 中文描述： | 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
| 封装： | 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68 |
| 文件页数： | 4/18页 |
| 文件大小： | 550K |
| 代理商： | AS8ER128K32Q-200/XT |
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
Austin Semiconductor, Inc.
Data Protection Cont.
a. Protection by RES\
The unprogrammable state can be realized by the
CPU's reset signal inputs directly to the EEPROM's RES pin.
RES should be kept V
SS
level during V
CC
on/off.
The EEPROM brakes off programming operation
when RES becomes low, programming operation doesn't fin-
ish correctly in case that RES falls low during programming
operation. RES should be kept high for 10ms after the last
data inputs. See the timing diagram below.
3. Software data protection
To prevent unintentional programming, this device
has the software data protection (SDP) mode. The SDP is
enabled by inputting the 3 bytes code and write data in
Chart 1. SDP is not enabled if only the 3 bytes code is input.
To program data in the SDP enable mode, 3 bytes code must
be input before write data. This 4th cycle during write is
required to initiate the SDP and physically writes the address
and data. While in SDP the entire array is protected in which
writes can only occur if the exact SDP sequence is
re-executed or the unprotect sequence is executed.
The SDP is disabled by inputting the 6 bytes code in
Chart 2. Note that, if data is input in the SDP disable cycle,
data can not be written.
The software data protection is not enabled at the
shipment.
NOTE: These are some differences between ASI's
and other company's for enable/disable sequence of software
data protection. If these are any questions, please contact ASI.
PROTECTION BY RES\
Program inhibit
V
CC
RES\
Program inhibit
WE\ or CE\
1 min
100 min
10 ms min
CHART 1
Address
5555
AAAA or 2AAA
5555
Write Address
Data
(each Byte)
AA
55
A0
Write Data} Normal data input
CHART 2
Address
5555
AAAA or 2AAA
5555
AAAA or 2AAA
5555
Data
(each Byte)
AA
55
80
AA
55
20
相关PDF资料 |
PDF描述 |
|---|---|
| AS8F128K32Q-120/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/IT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/Q | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8ER128K32Q-250/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32QB-150/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| AS8ER128K32QB-150/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
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