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参数资料
| 型号： | AS8S128K32Q1-20/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 128K x 32 SRAM SRAM MEMORY ARRAY |
| 中文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 |
| 封装： | 0.140 INCH HEIGHT, CERAMIC, QFP-68 |
| 文件页数： | 5/12页 |
| 文件大小： | 241K |
| 代理商： | AS8S128K32Q1-20/IT |
SRAM
AS8S128K32
AS8S128K32
Rev. 4.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss.....................-1V to +7V
Storage Temperature..........................................-65°C to +150°C
Short Circuit Output Current(per I/O)...............................20mA
Voltage on Any Pin Relative to Vss..................-.5V to Vcc+1V
Maximum Junction Temperature**.................................+175°C
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation on the
device at these or any other conditions above those indicated
in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
**Junction temperature depends upon package type, cycle time,
loading, ambient temperature and airflow. See the Application
Information section at the end of this datasheet for more infor-
mation.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55°C<TA<125°C; Vcc = 5v ±10%)
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CONDITIONS
SYM
-15
-17
-20
-25
-35
-45
UNITS NOTES
CE\<VIL; VCC=MAX
f = MAX = 1/tRC (MIN)
Outputs Open
Icc
700
650
600
560
520
500
mA
3, 13
(1)
CE\>VIH; VCC=MAX
f = MAX = 1/tRC (MIN)
Outputs Open
ISBT1
280
220
200
180
160
150
mA
(1)
CE\ = OE\ = VIH;
CMOS Compatible; VCC = MAX
f = 5 MHz
ISBT2
100
80
60
mA
(1)
CE\ > Vcc -0.2V; Vcc = MAX
VIL < Vss +0.2V;
VIH > VCC -0.2V; f = 0 Hz
ISBC1
40
mA
(2)
CE\ > Vcc -0.2V; Vcc = MAX
VIL < Vss +0.2V;
VIH > Vcc -0.2V; f = 0 Hz
"L" Version Only
ISBC2
24
mA
(2)
MAX
Power Supply Current:
Operating
PARAMETER
Power Supply Current:
Standby
NOTE: 1) Address switching sequence A, A+1, A+2, etc.
2) 1/2 input at HIGH, 1/2 input at LOW.
相关PDF资料 |
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| AS8S128K32Q1-20/XT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/883C | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/IT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/XT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-35/883C | 128K x 32 SRAM SRAM MEMORY ARRAY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8S128K32Q1-25/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/Q | 制造商:Micross Components, Inc. 功能描述:SRAM-MCM, 4MB - Trays |
| AS8S128K32Q1-25/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-35/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
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