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参数资料
| 型号： | AS8S128K32Q1-20/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 128K x 32 SRAM SRAM MEMORY ARRAY |
| 中文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 |
| 封装： | 0.140 INCH HEIGHT, CERAMIC, QFP-68 |
| 文件页数： | 8/12页 |
| 文件大小： | 241K |
| 代理商： | AS8S128K32Q1-20/IT |
SRAM
AS8S128K32
AS8S128K32
Rev. 4.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
7. At any given temperature and voltage condition,
t
HZCE, is less than tLZCE, and tHZWE is less than tLZWE.
8. ?W/E is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and output
enable are held in their active state.
10. Address valid prior to or coincident with latest occurring
chip enable.
11. t
RC= READ cycle time.
12. Chip enable (?C/E) and write enable (?W/E) can initiate and
terminate a WRITE cycle.
13. 32 bit operation
NOTES
1. All voltages referenced to V
SS (GND).
2. -3v for pulse width <20ns.
3. ICC is dependent on output loading and cycle rates.
The specified value applies with the outputs
4. This parameter is sampled.
5. Test conditions as specified with output loading as
shown in Fig. 1 unless otherwise noted.
6. t
HZCE, tHZOE and tHZWE are specified with CL= 5pF
as in Fig. 2. Transition is measured +/- 200 mV
typical from steady state coltage, allowing for actual
tester RC time constant.
open, and f=
HZ.
tRC(MIN)
1
LOW V
CC DATA RETENTION WAVEFORM
tR
tCDR
DATA RETENTION MODE
VDR
Vcc
CE\
4.5V
>2V
V
IH
V
IL
DATA RETENTION ELECTRICAL CHARACTERISTICS
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
NOTES
VCC for Retention Data
VDR
2--
V
CE\ > VCC - 0.2V
VCC = 2.0V
ICCDR
--
6
mA
VIN > VCC - 0.2V
VCC = 3V
ICCDR
--
11.6
mA
Chip Deselect to Data
Retention Time
tCDR
0--
ns
4
Operation Recovery Time
tR
tRC
ns
4, 11
Data Retention Current
CONDITIONS
相关PDF资料 |
PDF描述 |
|---|---|
| AS8S128K32Q1-20/XT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/883C | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/IT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/XT | 128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-35/883C | 128K x 32 SRAM SRAM MEMORY ARRAY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8S128K32Q1-25/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-25/Q | 制造商:Micross Components, Inc. 功能描述:SRAM-MCM, 4MB - Trays |
| AS8S128K32Q1-25/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
| AS8S128K32Q1-35/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 SRAM SRAM MEMORY ARRAY |
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