参数资料
型号: AS8S128K32Q1-20/IT
厂商: AUSTIN SEMICONDUCTOR INC
元件分类: SRAM
英文描述: 128K x 32 SRAM SRAM MEMORY ARRAY
中文描述: 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
封装: 0.140 INCH HEIGHT, CERAMIC, QFP-68
文件页数: 6/12页
文件大小: 241K
代理商: AS8S128K32Q1-20/IT
SRAM
AS8S128K32
AS8S128K32
Rev. 4.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
Austin Semiconductor, Inc.
AC TEST CONDITIONS
TEST SPECIFICATIONS
Input pulse levels........................................VSS to 3V
Input rise and fall times..........................................5ns
Input timing reference levels.................................1.5V
Output reference levels........................................1.5V
Output load.............................................See Figures 1
TRUTH TABLE
MODE
OE\
CE\
WE\
I/O
POWER
Read
L
H
Q
ACTIVE
Write
X
L
D
ACTIVE
Standby
X
H
X
HIGH Z
STANDBY
Not Selected
H
L
H
HIGH Z
ACTIVE
OH
OL
I
Current Source
Vz = 1.5V
(Bipolar
Supply)
Device
Under
Test
Ceff = 50pf
-+
+
NOTES:
Vz is programable from -2V to + 7V.
I
OL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH and VOL.
I
OL and IOH are adjusted to simulate a typical resistive load
circuit.
SYMBOL
PARAMETER
MAX
UNITS
NOTES
CADD
A0 - A18 Capacitance
40
pF
4
COE
OE\ Capacitance
40
pF
4
CWE, CCE
WE\ and CE\ Capacitance
20
pF
4
CIO
I/O 0- I/O 31 Capacitance
20
pF
4
Figure 1
CAPACITANCE TABLE (V
IN = 0V, f = 1 MHz, TA = 25
oC)
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