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| 型号： | AT-32032-BLK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIATURE, PLASTIC, SC-70, 3 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 1157K |
| 代理商： | AT-32032-BLK |
AT-32032
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32032 is a high performance NPN bipolar
transistor that has been optimized for maximum ft at
low voltage operation, making it ideal for use in battery
powered applications in cellular/PCS and other wireless
markets. The AT-32032 uses the miniature 3 lead SOT-323
(SC-70) plastic package.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz systems. Typical
amplifier design at 900 MHz yields 1 dB noise figures with
15 dB associated gain at 2.7 V and 5 mA bias condition,
with noise performance being relatively insensitive to
input match. High gain capability at 1 V and 1 mA makes
this device a good fit for 900 MHz pager applications.
Moreover, voltage breakdown is high enough for use
at 5 V.
The AT-32032 belongs to Avago’s AT-3XXXX series bipolar
transistors. It exhibits excellent device uniformity, per-
formance and reliability as a result of ion-implantation,
self-alignment techniques, and gold metalization in the
fabrication process.
Features
High Performance Bipolar Transistor Optimized for Low
Current, Low Voltage Applications at 900 MHz, 1.8 GHz,
and 2.4 GHz
Performance at 2.7 V, 5 mA:
900 MHz: 1 dB NF, 15 dB GA
1800 MHz: 1.3 dB NF, 11 dB GA
2400 MHz: 1.4 dB NF, 7.5 dB G
Characterized for End-Of-Life Battery Use (2.7 V)
Miniature 3-lead SOT-323 (SC-70) Plastic Package
Lead-free
Applications
LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and
Down Converter for Cellular and PCS Handsets and
Cordless Telephones
LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
Power Amplifier and Oscillator for RF-ID Tag
LNA and Gain Amplifier for GPS
LNA for CATV Set-Top Box
3-Lead SC-70 (SOT-323)
Surface Mount Plastic Package
Pin Configuration
BASE
EMITTER
COLLECTOR
32
相关PDF资料 |
PDF描述 |
|---|---|
| AT-32032-TR2G | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-TR2 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32032-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-TR1 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| AT-32033-BLKG | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT-32032-BLKG | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-32032-TR1 | 功能描述:IC TRANS NPN BIPOLAR SOT-323 RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| AT-32032-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| AT-32032-TR2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 40MA I(C) | SOT-323 |
| AT-32032-TR2G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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