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参数资料
| 型号： | AT-32033-TR1 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SMT, 3 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 112K |
| 代理商： | AT-32033-TR1 |
2
Electrical Specifications, TA = 25
°C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Min.
Typ.
Max.
NF
Noise Figure
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
1.0[1]
1.3[1]
1.0[2]
1.3[2]
GA
Associated Gain
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
dB
12.5[1]
14[1]
11[2]
12.5[2]
hFE
Forward Current Transfer Ratio
VCE = 2.7 V, IC = 2 mA
–
70
300
70
300
ICBO
Collector Cutoff Current
VCB = 3 V
A
0.2
I
EBO
Emitter Cutoff Current
V
EB = 1 V
A
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
11
VCEO
Collector-Emitter Voltage
V
5.5
IC
Collector Current
mA
32
PT
Power Dissipation[2, 3]
mW
200
Tj
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Thermal Resistance[2]:
θ
jc = 550
°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/
°C for T
C > 40°C.
1000 pF
VBB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 10 L = 1870
1000 pF
VCC
W = 10
CKT A: L = 105
CKT B: L = 850
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
ε = 4.8)
RF IN
W = 30
L = 60
CKT A: 25
CKT B: 5
RF OUT
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
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| AT-32033-TR1G | 功能描述:射频双极小信号晶体管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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