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参数资料
| 型号： | AT-41470 |
| 英文描述： | Up to 6 GHz Low Noise Silicon Bipolar Transistor(高达6 GHz低噪声硅双极型晶体管) |
| 中文描述： | 到6 GHz低噪声硅双极型晶体管（高达6 GHz的低噪声硅双极型晶体管） |
| 文件页数： | 2/6页 |
| 文件大小： | 42K |
| 代理商： | AT-41470 |
2
AT-41470 Absolute Maximum Ratings
Absolute
Maximum
[1]
1.5
20
12
60
500
200
-65 to 200
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 5.7 mW/
°
C for T
C
> 113
°
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Thermal Resistance
[2,4]
:
θ
jc
= 175
°
C/W
Electrical Specifications, T
A
= 25
°
C
Symbol
|S
21E
|
2
Insertion Power Gain; V
CE
= 8 V, I
C
= 25 mA
Parameters and Test Conditions
Units Min.
dB
Typ. Max.
12.0
6.5
19.0
18.5
15.0
10.5
1.3
1.6
3.0
18.5
14.5
10.5
8.0
150
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
P
1 dB
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 25 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 25 mA
dBm
G
1 dB
dB
NF
O
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
dB
1.9
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
dB
13.0
f
T
h
FE
I
CBO
I
EBO
C
CB
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 25 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 10 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
GHz
—
μ
A
μ
A
pF
30
300
0.2
1.0
0.2
Note:
1. For this test, the emitter is grounded.
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