参数资料
型号: AT45DB021B-TU
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 2-megabit 2.7-volt Only DataFlash
中文描述: 2M X 1 FLASH 2.7V PROM, PDSO28
封装: 18 X 13.40 MM, GREEN, PLASTIC, MO-183, TSOP1-28
文件页数: 3/32页
文件大小: 304K
代理商: AT45DB021B-TU
3
1937J–DFLSH–9/05
AT45DB021B
3.
Block Diagram
4.
Memory Array
To provide optimal flexibility, the memory array of the AT45DB021B is divided into three levels of
granularity comprised of sectors, blocks and pages. The Memory Architecture Diagram illus-
trates the breakdown of each level and details the number of pages per sector and block. All
program operations to the DataFlash occur on a page-by-page basis; however, the optional
erase operations can be performed at the block or page level.
Figure 4-1.
Memory Architecture Diagram
FLASH MEMORY ARRAY
PAGE (264 BYTES)
BUFFER 2 (264 BYTES)
BUFFER 1 (264 BYTES)
I/O INTERFACE
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SO
SI
SECTOR 0a = 8 Pages
2112 bytes (2K + 64)
SECTOR 0b = 248 Pages
65,472 bytes (62K + 1984)
Block = 2112 bytes
(2K + 64)
8 Pages
SECTOR 0
S
Page = 264 bytes
(256 + 8)
PAGE 0
PAGE 1
PAGE 6
PAGE 7
PAGE 8
PAGE 9
PAGE 1022
PAGE 1023
B
PAGE 14
PAGE 15
PAGE 16
PAGE 17
PAGE 18
PAGE 1021
B
SECTOR ARCHITECTURE
BLOCK ARCHITECTURE
PAGE ARCHITECTURE
BLOCK 0
BLOCK 1
BLOCK 30
BLOCK 31
BLOCK 32
BLOCK 33
BLOCK 126
BLOCK 127
BLOCK 62
BLOCK 63
BLOCK 64
BLOCK 65
S
BLOCK 2
SECTOR 0c = 256 Pages
67,584 bytes (64K + 2K)
SECTOR 1 = 512 Pages
135,168 bytes (128K + 4K)
相关PDF资料
PDF描述
AT45DB021B-SC 2-megabit 2.7-volt Only DataFlash??
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AT45DB021B-RC 2-megabit 2.7-volt Only DataFlash??
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