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参数资料
| 型号： | AT49BV040T |
| 厂商： | Atmel Corp. |
| 英文描述： | 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器) |
| 中文描述： | 为512k × 8单2.7伏电池电压快闪记忆体（为512k × 8单电源为2.7V电池电压技术闪速存储器） |
| 文件页数： | 1/14页 |
| 文件大小： | 278K |
| 代理商： | AT49BV040T |
1
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time – 70 ns
Internal Program Control and Timer
16K Bytes Boot Block with Lockout
Fast Chip Erase Cycle Time – 10 seconds
Byte-by-byte Programming – 30 μs/Byte Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 μA CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
– 8 x 14 mm VSOP/TSOP
Description
The AT49BV/LV040(T) are 3-volt only, 4-megabit Flash memories organized as
524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS
technology, the devices offer access times to 70 ns with power dissipation of just
90 mW over the commercial temperature range. When the device is deselected, the
CMOS standby current is less than 50 μA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
Rev. 0679C–04/00
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
A
A
V
W
A
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
相关PDF资料 |
PDF描述 |
|---|---|
| AT49LV040 | 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49BV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49LV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49LV080T | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49BV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV040T-12JC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AT49BV040T-12JI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AT49BV040T-12TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AT49BV040T-12TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AT49BV040T-12VC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
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