参数资料
型号: AT49BV040T
厂商: Atmel Corp.
英文描述: 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器)
中文描述: 为512k × 8单2.7伏电池电压快闪记忆体(为512k × 8单电源为2.7V电池电压技术闪速存储器)
文件页数: 6/14页
文件大小: 278K
代理商: AT49BV040T
AT49BV/LV040(T)
6
AC Read Waveforms
(1)(2)(3)(4)
Notes:
1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
t
R
, t
F
< 5 ns
Output Test Load
Note:
1. This parameter is characterized and is not 100% tested.
AC Read Characteristics
Symbol
Parameter
AT49LV040-70
AT49BV/LV040-90
AT49BV040-12
Units
Min
Max
Min
Max
Min
Max
t
ACC
Address to Output Delay
70
90
120
ns
t
CE
(1)
CE to Output Delay
70
90
120
ns
t
OE
(2)
OE to Output Delay
0
35
0
40
0
50
ns
t
DF
(3)(4)
CE or OE to Output Float
0
25
0
25
0
30
ns
t
OH
Output Hold from OE, CE or Address,
whichever comes first
0
0
0
ns
Pin Capacitance
f = 1 MHz, T = 25
°
C
(1)
Symbol
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
相关PDF资料
PDF描述
AT49LV040 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器)
AT49BV080 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器)
AT49LV080 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器)
AT49LV080T 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器)
AT49BV1024A 1-megabit (64K x 16) 3-volt Only Flash Memory
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