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参数资料
| 型号： | AT49BV1604T-90TC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | PLASTIC, MO-142DD, TSOP-48 |
| 文件页数： | 4/18页 |
| 文件大小： | 214K |
| 代理商： | AT49BV1604T-90TC |
AT49BV16X4(T)
4
RESET:
A RESET input pin is provided to ease some sys-
tem applications. When RESET is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedance state. When
a high level is reasserted on the RESET pin, the device
returns to the Read or Standby mode, depending upon the
state of the control inputs. By applying a 12V
±
0.5V input
signal to the RESET pin any sector can be reprogrammed
even if the sector lockout feature has been enabled (see
Sector Programming Lockout Override section).
ERASURE:
Before a byte/word can be reprogrammed, it
must be erased. The erased state of memory bits is a logi-
cal “1”. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by
using the Sector Erase commands.
CHIP ERASE:
The entire device can be erased at one
time by using the 6-byte chip erase software code. After the
chip erase has been initiated, the device will internally time
the erase operation so that no external clocks are required.
The maximum time to erase the chip is t
EC
.
If the sector lockout has been enabled, the Chip Erase will
not erase the data in the sector that has been locked; it will
erase only the unprotected sectors. After the chip erase,
the device will return to the read or standby mode.
SECTOR ERASE:
As an alternative to a full chip erase, the
device is organized into forty sectors (SA0 - SA39) that can
be individually erased. The Sector Erase command is a six
bus cycle operation. The sector address is latched on the
falling WE edge of the sixth cycle while the 30H data input
command is latched on the rising edge of WE. The sector
erase starts after the rising edge of WE of the sixth cycle.
The erase operation is internally controlled; it will automati-
cally time to completion. The maximum time to erase a sec-
tion is t
SEC
. When the sector programming lockout feature
is not enabled, the sector will erase (from the same sector
erase command). Once a sector has been protected, data
in the protected sectors cannot be changed unless the
RESET pin is taken to 12V ± 0.5V. An attempt to erase a
sector that has been protected will result in the operation
terminating in 2
μ
s.
BYTE/WORD PROGRAMMING:
Once a memory block is
erased, it is programmed (to a logical “0”) on a byte-by-byte
or on a word-by-word basis. Programming is accomplished
via the internal device command register and is a 4-bus
cycle operation. The device will automatically generate the
required internal program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0”
cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is completed after
the specified t
BP
cycle time. The DATA polling feature or
the toggle bit feature may be used to indicate the end of a
program cycle.
SECTOR PROGRAMMING LOCKOUT:
Each sector has a
programming lockout feature. This feature prevents pro-
gramming of data in the designated sectors once the fea-
ture has been enabled. These sectors can contain secure
code that is used to bring up the system. Enabling the lock-
out feature will allow the boot code to stay in the device
while data in the rest of the device is updated. This feature
does not have to be activated; any sector’s usage as a
write protected region is optional to the user.
Once the feature is enabled, the data in the protected sec-
tors can no longer be erased or programmed when input
levels of 5.5V or less are used. Data in the remaining sec-
tors can still be changed through the regular programming
method. To activate the lockout feature, a series of six pro-
gram commands to specific addresses with specific data
must be performed. Please refer to the Command Defini-
tions table.
SECTOR PROGRAMMING LOCKOUT OVERRIDE:
The
user can override the sector programming lockout by taking
the RESET pin to 12V
±
0.5V. By doing this protected data
can be altered through a chip erase, sector erase or
byte/word programming. When the RESET pin is brought
back to TTL levels the sector programming lockout feature
is again active.
ERASE SUSPEND/ERASE RESUME:
The erase suspend
command allows the system to interrupt a sector erase
operation and then program or read data from a different
sector within the same plane. Since this device has a dual
plane architecture, there is no need to use the erase sus-
pend feature while erasing a sector when you want to read
data from a sector in the other plane. After the erase sus-
pend command is given, the device requires a maximum
time of 15
μ
s to suspend the erase operation. After the
erase operation has been suspended, the plane which con-
tains the suspended sector enters the erase-suspend-read
mode. The system can then read data or program data to
any other sector within the device. An address is not
required during the erase suspend command. During a
sector erase suspend, another sector cannot be erased. To
resume the sector erase operation, the system must write
the erase resume command. The erase resume command
is a one bus cycle command, which does require the plane
address (determined by A18 and A19). The device also
supports an erase suspend during a complete chip erase.
While the chip erase is suspended, the user can read from
any sector within the memory that is protected. The com-
mand sequence for a chip erase suspend and a sector
erase suspend are the same.
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
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| AT49BV1604T-90TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory |
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