参数资料
型号: AT49BV1604T-90TC
厂商: ATMEL CORP
元件分类: DRAM
英文描述: 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
封装: PLASTIC, MO-142DD, TSOP-48
文件页数: 5/18页
文件大小: 214K
代理商: AT49BV1604T-90TC
AT49BV16X4(T)
5
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING:
The AT49BV16X4(T) features DATA
polling to indicate the end of a program cycle. During a pro-
gram cycle an attempted read of the last byte/word loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. During a
chip or sector erase operation, an attempt to read the
device will give a “0” on I/O7. Once the program or erase
cycle has completed, true data will be read from the device.
DATA polling may begin at any time during the program
cycle. Please see “Status Bit Table” for more details.
TOGGLE BIT:
In addition to DATA polling the
AT49BV16X4(T) provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
same memory plane will result in I/O6 toggling between
one and zero. Once the program cycle has completed, I/O6
will stop toggling and valid data will be read. Examining the
toggle bit may begin at any time during a program cycle.
An additional toggle bit is available on I/O2 which can be
used in conjunction with the toggle bit which is available on
I/O6. While a sector is erase suspended, a read or a pro-
gram operation from the suspended sector will result in the
I/O2 bit toggling. Please see status bit table for more
details.
RDY/BUSY:
An open drain READY/BUSY output pin pro-
vides another method of detecting the end of a program or
erase operation. RDY/BUSY is actively pulled low during
the internal program and erase cycles and is released at
the completion of the cycle. The open drain connection
allows for OR-tying of several devices to the same
RDY/BUSY line.
HARDWARE DATA PROTECTION:
Hardware features
protect against inadvertent programs to the
AT49BV16X4(T) in the following ways: (a) V
CC
sense: if
V
CC
is below 1.8V (typical), the program function is inhib-
ited. (b) V
CC
power on delay: once V
CC
has reached the
V
CC
sense level, the device will automatically time out 10
ms (typical) before programming. (c) Program inhibit: hold-
ing any one of OE low, CE high or WE high inhibits pro-
gram cycles. (d) Noise filter: pulses of less than 15 ns
(typical) on the WE or CE inputs will not initiate a program
cycle.
INPUT LEVELS:
While operating with a 2.7V to 3.6V
power supply, the address inputs and control inputs (OE,
CE, and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to V
CC
+ 0.6V.
OUTPUT LEVELS:
Output High Levels (V
OH
) are equal to
V
CCQ
- 0.2V (not V
CC
). For 2.7V - 3.6V output levels, V
CCQ
must be tied to V
CC
. For 1.8V - 2.2V output levels, V
CCQ
must be regulated to 2.0V ± 10% while V
CC
must be regu-
lated to 2.7V - 3.0V (for minimum power).
相关PDF资料
PDF描述
AT49BV1604T-90TI 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604T-90UC 16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
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相关代理商/技术参数
参数描述
AT49BV1604T-90TI 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
AT49BV1604T-90UC 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV1604T-90UI 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-Megabit 1M x 16/2M x 8 3-volt Only Flash Memory
AT49BV160-70CI 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|45PIN|PLASTIC
AT49BV160-70TI 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory