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参数资料
| 型号： | AT49BV8011 |
| 厂商： | Atmel Corp. |
| 英文描述： | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| 中文描述： | 8兆位3伏的快闪记忆体（800万位3V的闪速存储器） |
| 文件页数： | 5/18页 |
| 文件大小： | 322K |
| 代理商： | AT49BV8011 |
AT49BV/LV8011(T)
5
For details, see
“
Operating Modes
”
(for hardware opera-
tion) or
“
Software Product Identification
”
. The manufacturer
and device code is the same for both modes.
DATA POLLING:
The AT49BV/LV8011(T) features DATA
polling to indicate the end of a program cycle. During a pro-
gram cycle an attempted read of the last byte/word loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. During a
chip or sector erase operation, an attempt to read the
device will give a
“
0
”
on I/O7. Once the program or erase
cycle has completed, true data will be read from the device.
DATA polling may begin at any time during the program
cycle. Please see
“
Status Bit Table
”
for more details.
TOGGLE BIT:
In addition to DATA polling, the
AT49BV/LV8011(T) provides another method for determin-
ing the end of a program or erase cycle. During a program
or erase operation, successive attempts to read data from
the same memory plane will result in I/O6 toggling between
“
1
”
and
“
0
”
. Once the program cycle has completed, I/O6
will stop toggling and valid data will be read. Examining the
toggle bit may begin at any time during a program cycle.
An additional toggle bit is available on I/O2, which can be
used in conjunction with the toggle bit that is available on
I/O6. While a sector is erase suspended, a read or a
program operation from the suspended sector will result in
the I/O2 bit toggling. Please see
“
Status Bit Table
”
for more
details.
RDY/BUSY:
An open drain READY/BUSY output pin pro-
vides another method of detecting the end of a program or
erase operation. RDY/BUSY is actively pulled low during
the internal program and erase cycles and is released at
the completion of the cycle. The open drain connection
allows for OR-tying of several devices to the same
RDY/BUSY line.
HARDWARE DATA PROTECTION:
Hardware features
protect against inadvertent programs to the
AT49BV/LV8011(T) in the following ways: (a) V
CC
sense: if
V
CC
is below 1.8V (typical), the program function is inhib-
ited. (b) V
CC
power on delay: once V
CC
has reached the
V
CC
sense level, the device will automatically time out
10 ms (typical) before programming. (c) Program inhibit:
holding any one of OE low, CE high or WE high inhibits
program cycles. (d) Noise filter: pulses of less than 15 ns
(typical) on the WE or CE inputs will not initiate a program
cycle.
INPUT LEVELS:
While operating with a 2.7V to 3.3V
power supply, the address inputs and control inputs (OE,
CE, and WE) may be driven from 0 to 5.5V without
adversely affecting the operation of the device. The I/O
lines can only be driven from 0 to V
CC
+ 0.6V.
相关PDF资料 |
PDF描述 |
|---|---|
| AT49BV8011T | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| AT49LV8011 | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| AT49LV8011T | 8-megabit 3-volt Flash Memory(8M位 3V闪速存储器) |
| AT49BV802A | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
| AT49BV802A-70CI | 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV8011-11CI | 功能描述:IC FLASH 8MBIT 110NS 48CBGA 制造商:microchip technology 系列:- 包装:托盘 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:8Mb （1M x 8，512K x 16） 写周期时间 - 字，页:50μs 访问时间:110ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.3 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:48-VFBGA，CSBGA 供应商器件封装:48-CBGA（6x8） 基本零件编号:AT49BV8011 标准包装:360 |
| AT49BV8011-12CC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011-12CI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011-12TC | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory |
| AT49BV8011-12TI | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory |
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