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参数资料
| 型号： | AT49LV040 |
| 厂商： | Atmel Corp. |
| 英文描述： | 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器) |
| 中文描述： | 为512k × 8单2.7伏电池电压快闪记忆体（为512k × 8单电源为2.7V电池电压技术闪速存储器） |
| 文件页数： | 4/14页 |
| 文件大小： | 278K |
| 代理商： | AT49LV040 |
AT49BV/LV040(T)
4
Notes:
1. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49BV/LV040 and 7C000H to 7FFFFH for the
AT49BV/LV040T.
2. Either one of the Product ID Exit commands can be used.
Command Definition (in Hex)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
1
Addr
D
OUT
Chip Erase
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
10
Byte Program
4
5555
AA
2AAA
55
5555
A0
Addr
D
IN
Boot Block Lockout
(1)
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
40
Product ID Entry
3
5555
AA
2AAA
55
5555
90
Product ID Exit
(2)
3
5555
AA
2AAA
55
5555
F0
Product ID Exit
(2)
1
XXXX
F0
Absolute Maximum Ratings*
Temperature under Bias ................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under
“
Absolute Maxi-
mum Ratings
”
may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE
with Respect to Ground..................................-0.6V to + 13.5V
相关PDF资料 |
PDF描述 |
|---|---|
| AT49BV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49LV080 | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49LV080T | 8-Megabit Single 2.7-volt Battery-Voltage Flash Memory(8M位单电源2.7V Battery-Voltage技术闪速存储器) |
| AT49BV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
| AT49LV1024A | 1-megabit (64K x 16) 3-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49LV040-12JC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV040-12JI | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV040-12TC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV040-12TI | 功能描述:IC FLASH 4MBIT 120NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49LV040-12VC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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