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参数资料
| 型号： | AT49SN6416T |
| 厂商： | Atmel Corp. |
| 英文描述： | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| 中文描述： | 64兆位（4米× 16）突发/页模式1.8伏的快闪记忆体 |
| 文件页数： | 13/42页 |
| 文件大小： | 418K |
| 代理商： | AT49SN6416T |
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13
3464C–FLASH–2/05
AT49SN6416(T)
3.18
Common Flash Interface (CFI)
CFI is a published, standardized data structure that may be read from a flash device. CFI allows
system software to query the installed device to determine the configurations, various electrical
and timing parameters, and functions supported by the device. CFI is used to allow the system
to learn how to interface to the flash device most optimally. The two primary benefits of using
CFI are ease of upgrading and second source availability. The command to enter the CFI Query
mode is a one-bus cycle command which requires writing data 98h to any address. The CFI
Query command can be written when the device is ready to read data or can also be written
when the part is in the product ID mode. Once in the CFI Query mode, the system can read CFI
data at the addresses given in
“Common Flash Interface Definition Table” on page 37
. To return
to the read mode, the read command should be issued.
3.19
Hardware Data Protection
Hardware features protect against inadvertent programs to the AT49SN6416(T) in the following
ways: (a) V
CC
sense: if V
CC
is below 1.2V (typical), the device is reset and the program and
erase functions are inhibited. (b) V
CC
power-on delay: once V
CC
has reached the V
CC
sense
level, the device will automatically time-out 10 ms (typical) before programming. (c) Program
inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter:
pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
(e) V
PP
is less than V
ILPP
.
3.20
Input Levels
While operating with a 1.65V to 1.95V power supply, the address inputs and control inputs (OE,
CE and WE) may be driven from 0 to 2.5V without adversely affecting the operation of the
device. The I/O lines can be driven from 0 to V
CCQ
+ 0.6V.
3.21
Output Levels
For the AT49SN6416(T), output high levels are equal to V
CCQ
- 0.1V (not V
CC
). V
CCQ
must be
regulated between 1.65V - 2.25V.
相关PDF资料 |
PDF描述 |
|---|---|
| AT49SN6416T-70CI | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SN6416 | 64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
| AT49SV322A | 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory |
| AT49SV322AT | 32-megabit (2M x 16/4M x 8) 1.8-volt Only Flash Memory |
| AT49SV802A-90CI | 8-megabit 1.8-volt Only Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49SV163D-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163D-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80CU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV163DT-80TU | 功能描述:闪存 Parallel 闪存 1.8V 80NS, GR RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49SV322A-80CU | 制造商:Atmel Corporation 功能描述:Flash Parallel 1.8V 32Mbit 4M/2M x 8bit/16bit 80ns 48-Pin CBGA |
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