参数资料
型号: AT89C51RC
厂商: Atmel Corp.
英文描述: 8-bit Microcontroller with 32K Bytes Flash(带32k字节闪速存储器、8位微控制器)
中文描述: 8位32K字节闪存(带32K的字节闪速存储器,微控制器8位微控制器)
文件页数: 13/29页
文件大小: 340K
代理商: AT89C51RC
13
AT45DB011B
1984B
09/01
Note:
1. I
cc1
during a buffer read is 20mA maximum.
DC Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Units
I
SB
Standby Current
CS, RESET, WP = V
IH
, all inputs at
CMOS levels
2
10
μA
I
CC1
(1)
Active Current, Read Operation
f = 20 MHz; I
OUT
= 0 mA; V
CC
= 3.6V
4
10
mA
I
CC2
Active Current, Program/Erase
Operation
V
CC
= 3.6V
10
25
mA
I
LI
Input Load Current
V
IN
= CMOS levels
1
μA
I
LO
Output Leakage Current
V
I/O
= CMOS levels
1
μA
V
IL
Input Low Voltage
0.6
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 1.6 mA; V
CC
= 2.7V
0.4
V
V
OH
Output High Voltage
I
OH
= -100 μA
V
CC
- 0.2V
V
AC Characteristics
Symbol
Parameter
Min
Typ
Max
Units
f
SCK
SCK Frequency
20
MHz
f
CAR
SCK Frequency for Continuous Array Read
20
MHz
t
WH
SCK High Time
22
ns
t
WL
SCK Low Time
22
ns
t
CS
Minimum CS High Time
250
ns
t
CSS
CS Setup Time
250
ns
t
CSH
CS Hold Time
250
ns
t
CSB
CS High to RDY/BUSY Low
200
ns
t
SU
Data In Setup Time
5
ns
t
H
Data In Hold Time
10
ns
t
HO
Output Hold Time
0
ns
t
DIS
Output Disable Time
18
ns
t
V
Output Valid
20
ns
t
XFR
Page to Buffer Transfer/Compare Time
120
200
μs
t
EP
Page Erase and Programming Time
10
20
ms
t
P
Page Programming Time
7
15
ms
t
PE
Page Erase Time
6
10
ms
t
BE
Block Erase Time
7
15
ms
t
RST
RESET Pulse Width
10
μs
t
REC
RESET Recovery Time
1
μs
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