参数资料
型号: AT89C51RC
厂商: Atmel Corp.
英文描述: 8-bit Microcontroller with 32K Bytes Flash(带32k字节闪速存储器、8位微控制器)
中文描述: 8位32K字节闪存(带32K的字节闪速存储器,微控制器8位微控制器)
文件页数: 6/29页
文件大小: 340K
代理商: AT89C51RC
6
AT45DB011B
1984B
09/01
timed and should take place in a maximum time of t
P
. During this time, the status register will
indicate that the part is busy.
Successive page programming operations without doing a page erase are not recommended.
In other words, changing bytes within a page from a
1
to a
0
during multiple page program-
ming operations without erasing that page is not recommended.
PAGE ERASE:
The optional Page Erase command can be used to individually erase any
page in the main memory array allowing the Buffer to Main Memory Page Program without
Built-in Erase command to be utilized at a later time. To perform a Page Erase, an opcode of
81H must be loaded into the device, followed by six reserved bits, nine address bits (PA8-
PA0), and nine don
t care bits. The nine address bits are used to specify which page of the
memory array is to be erased. When a low-to-high transition occurs on the CS pin, the part will
erase the selected page to 1s. The erase operation is internally self-timed and should take
place in a maximum time of t
PE
. During this time, the status register will indicate that the part is
busy.
BLOCK ERASE:
A block of eight pages can be erased at one time allowing the Buffer to Main
Memory Page Program without Built-in Erase command to be utilized to reduce programming
times when writing large amounts of data to the device. To perform a Block Erase, an opcode
of 50H must be loaded into the device, followed by six reserved bits, six address bits (PA8-
PA3), and 12 don
t care bits. The six address bits are used to specify which block of eight
pages is to be erased. When a low-to-high transition occurs on the CS pin, the part will erase
the selected block of eight pages to 1s. The erase operation is internally self-timed and should
take place in a maximum time of t
BE
. During this time, the status register will indicate that the
part is busy.
MAIN MEMORY PAGE PROGRAM THROUGH BUFFER:
This operation is a combination of
the Buffer Write and Buffer to Main Memory Page Program with Built-in Erase operations.
Data is first shifted into the buffer from the SI pin and then programmed into a specified page
in the main memory. An 8-bit opcode of 82H is followed by the six reserved bits and 18
address bits. The nine most significant address bits (PA8-PA0) select the page in the main
memory where data is to be written, and the next nine address bits (BFA8-BFA0) select the
first byte in the buffer to be written. After all address bits are shifted in, the part will take data
from the SI pin and store it in the data buffer. If the end of the buffer is reached, the device will
wrap around back to the beginning of the buffer. When there is a low-to-high transition on the
CS pin, the part will first erase the selected page in main memory to all 1s and then program
Block Erase Addressing
PA8
PA7
PA6
PA5
PA4
PA3
PA2
PA1
PA0
Block
0
0
0
0
0
0
X
X
X
0
0
0
0
0
0
1
X
X
X
1
0
0
0
0
1
0
X
X
X
2
0
0
0
0
1
1
X
X
X
3
1
1
1
1
0
0
X
X
X
60
1
1
1
1
0
1
X
X
X
61
1
1
1
1
1
0
X
X
X
62
1
1
1
1
1
1
X
X
X
63
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