参数资料
型号: AT91SAM7X-EK
厂商: Atmel
文件页数: 9/44页
文件大小: 0K
描述: KIT EVAL FOR AT91SAM7X256/128
产品培训模块: AT91SAM7X and SAM7XC Flash-based Microcontrollers
MCU Product Line Introduction
标准包装: 1
系列: AT91SAM 智能 ARM
类型: MCU
适用于相关产品: AT91SAM7X256,AT91SAM7X128
所含物品: 板,线缆,DVD,电源
相关产品: AT91SAM7X256-CU-999-ND - IC MCU ARM7 256KB FLASH 100TFBGA
AT91SAM7X128-CU-999-ND - IC MCU ARM7 128KB FLASH 100TFBGA
AT91SAM7X128-AU-999-ND - IC MCU ARM7 128KB FLASH 100LQFP
AT91SAM7X512-CU-ND - MCU ARM 512K HS FLASH 100-TFBGA
AT91SAM7X512-AU-ND - MCU ARM 512K HS FLASH 100-LQFP
AT91SAM7X256-CU-ND - MCU ARM 256K HS FLASH 100-TFBGA
AT91SAM7X128-CU-ND - MCU ARM 128K HS FLASH 100-TFBGA
AT91SAM7X256-AU-999TR-ND - IC ARM7 MCU 256K FLASH 100-LQFP
AT91SAM7X256-AU-ND - IC ARM7 MCU FLASH 256K 100LQFP
AT91SAM7X128-AU-ND - IC ARM7 MCU FLASH 128K 100LQFP
17
6120GS–ATARM–07-Apr-11
SAM7X512/256/128 Summary
8.
Memories
8.1
SAM7X512
512 Kbytes of dual-plane Flash Memory
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
128 Kbytes of Fast SRAM
– Single-cycle access at full speed
8.2
SAM7X256
256 Kbytes of Flash Memory
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
64 Kbytes of Fast SRAM
– Single-cycle access at full speed
8.3
SAM7X128
128 Kbytes of Flash Memory
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
32 Kbytes of Fast SRAM
– Single-cycle access at full speed
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