参数资料
型号: AT91SAM9XE128-QU
厂商: Atmel
文件页数: 39/159页
文件大小: 0K
描述: MCU ARM9 128K FLASH 208-PQFP
产品培训模块: MCU Product Line Introduction
标准包装: 24
系列: SAM9XE
核心处理器: ARM9
芯体尺寸: 16/32-位
速度: 180MHz
连通性: EBI/EMI,以太网,I²C,MMC,SPI,SSC,UART/USART,USB
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 96
程序存储器容量: 128KB(128K x 8)
程序存储器类型: 闪存
RAM 容量: 40K x 8
电压 - 电源 (Vcc/Vdd): 1.65 V ~ 1.95 V
数据转换器: A/D 4x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 208-MQFP,208-PQFP
包装: 托盘
配用: AT91SAM9XE-EK-ND - KIT EVAL FOR AT91SAM9XE
AT91SAM-ICE-ND - EMULATOR FOR AT91 ARM7/ARM9
2003 Microchip Technology Inc.
Preliminary
DS40300C-page 131
PIC16F62X
D020
I
PD
Power Down Current*(2), (3)
PIC16LF62X
0.20
2.0
2.2
A
V
DD = 2.0
V
DD = 5.5
D020
PIC16F62X
0.20
2.70
2.2
5.0
9.0
15.0
A
V
DD = 3.0
V
DD = 4.5*
V
DD = 5.5
V
DD = 5.5 Extended
D023
IWDT
IBOD
ICOMP
IVREF
WDT Current(4)
Brown-out Detect Current(4)
Comparator Current for each
Comparator(4)
V
REF Current(4)
6.0
75
30
15
125
50
135
A
V
DD = 3.0V
BOD enabled, V
DD = 5.0V
V
DD = 3.0V
V
DD = 3.0V
D023
IWDT
IBOD
ICOMP
IVREF
WDT Current(4)
Brown-out Detect Current(4)
Comparator Current for each
Comparator(4)
V
REF Current(4)
6.0
75
30
20
25
125
50
135
A
V
DD = 4.0V, Commercial,
Industrial
V
DD = 4.0V, Extended
BOD enabled, V
DD = 5.0V
V
DD = 4.0V
V
DD = 4.0V
Legend: Rows with standard voltage device data only are shaded for improved readability.
*
These parameters are characterized but not tested.
Data in “Typ” column is at 5.0V, 25
°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note
1: This is the limit to which V
DD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all I
DD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V
DD,
MCLR = V
DD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD or VSS.
4: The
current is the additional current consumed when this peripheral is enabled. This current should be added to the
base I
DD or IPD measurement.
5: For RC osc configuration, current through R
EXT is not included. The current through the resistor can be estimated by the
formula Ir = V
DD/2REXT (mA) with REXT in k
.
17.1
DC Characteristics: PIC16F62X-04 (Commercial, Industrial, Extended)
PIC16F62X-20 (Commercial, Industrial, Extended)
PIC16LF62X-04 (Commercial, Industrial)
PIC16LF62X-04
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ Ta ≤ +85°C for industrial and
0
°C ≤ Ta ≤ +70°C for commercial
PIC16F62X-04
PIC16F62X-20
(Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ Ta ≤ +85°C for industrial and
0
°C ≤ Ta ≤ +70°C for commercial and
-40
°C ≤ Ta ≤ +125°C for extended
Param
No.
Sym
Characteristic/Device
Min
Typ
Max
Units
Conditions
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