参数资料
型号: AT91SAM9XE512-QU
厂商: Atmel
文件页数: 34/159页
文件大小: 0K
描述: MCU ARM9 512K FLASH 208-PQFP
产品培训模块: MCU Product Line Introduction
标准包装: 24
系列: SAM9XE
核心处理器: ARM9
芯体尺寸: 16/32-位
速度: 180MHz
连通性: EBI/EMI,以太网,I²C,MMC,SPI,SSC,UART/USART,USB
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 96
程序存储器容量: 512KB(512K x 8)
程序存储器类型: 闪存
RAM 容量: 56K x 8
电压 - 电源 (Vcc/Vdd): 1.65 V ~ 1.95 V
数据转换器: A/D 4x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 208-MQFP,208-PQFP
包装: 托盘
配用: AT91SAM9XE-EK-ND - KIT EVAL FOR AT91SAM9XE
AT91SAM-ICE-ND - EMULATOR FOR AT91 ARM7/ARM9
2003 Microchip Technology Inc.
Preliminary
DS40300C-page 127
PIC16F62X
17.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Ambient temperature under bias................................................................................................................. -40 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on V
DD with respect to VSS ............................................................................................................ -0.3 to +6.5V
Voltage on MCLR and RA4 with respect to V
SS ............................................................................................-0.3 to +14V
Voltage on all other pins with respect to V
SS ....................................................................................-0.3V to VDD + 0.3V
Total power dissipation(1) ..................................................................................................................................... 800 mW
Maximum current out of V
SS pin ...........................................................................................................................300 mA
Maximum current into V
DD pin ..............................................................................................................................250 mA
Input clamp current, I
IK (VI < 0 or VI > VDD)
..................................................................................................................... ± 20 mA
Output clamp current, IOK (Vo < 0 or Vo >V
DD)
............................................................................................................... ± 20 mA
Maximum output current sunk by any I/O pin.......................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .................................................................................................... 25 mA
Maximum current sunk by PORTA and PORTB.................................................................................................... 200 mA
Maximum current sourced by PORTA and PORTB .............................................................................................. 200 mA
Note 1: Power dissipation is calculated as follows: P
DIS = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
Voltage spikes below V
SS at the MCLR pin, inducing currents greater than 80 mA, may cause latchup. Thus,
a series resistor of 50-100
should be used when applying a “low” level to the MCLR pin rather than pulling
this pin directly to V
SS
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