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参数资料
| 型号： | ATF-33143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 14/18页 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR2 |
5
ATF-33143 Typical Performance Curves, continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between optimal
noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual
measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing.
Figure 12. Fmin vs. Frequency and
Current at 4 V.
Figure 13. Associated Gain vs.
Frequency and Current at 4 V.
FREQUENCY (MHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4 V, IDS = 80 mA.
P
1dB
,OIP3
(dBm)
0
8000
40
35
30
25
20
15
4000
2000
6000
25
°C
-40
°C
85
°C
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias [1,2] at 5.8 GHz.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
F
min
(dB)
010
1.5
1.0
0.5
0
4
28
6
80 mA
60 mA
FREQUENCY (GHz)
G
a
(dB)
010
30
25
20
15
10
5
0
4
28
6
80 mA
60 mA
FREQUENCY (GHz)
G
a
(dB)
NOISE
FIGURE
(dB)
25
20
15
10
5
2.0
1.5
1.0
0.5
0
25
°C
-40
°C
85
°C
010
4
28
6
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4 V, IDS = 80 mA.
IDSQ (mA)
OIP3,
P
1dB
(dBm),
GAIN
(dB)
35
30
25
20
15
10
5
0
NOISE
FIGURE
(dB)
P1dB
OIP3
Gain
NF
0
120
40
20
80
100
60
IDSQ (mA)
OIP3,
P
1dB
(dBm),
GAIN
(dB)
35
30
25
20
15
10
5
0
NOISE
FIGURE
(dB)
3
2
1
0
P1dB
OIP3
NF
Gain
0
120
40
20
80
100
60
相关PDF资料 |
PDF描述 |
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| ATF-33143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-33143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF331M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-331M4-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-331M4-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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