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参数资料
| 型号： | ATF-33143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 16/18页 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR2 |
7
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq
P1dB
Id
G1dB
PAE1dB
P3dB
Id
PAE3dB
G Out_mag
G Out_ang
(GHz)
(dBm)
(mA)
(dB)
(%)
(dBm)
(mA)
(%)
(Mag.)
(
°)
0.9
20.7
89
23.2
33
23.2
102
51
0.39
160
1.5
21.2
91
20.7
36
23.8
116
51
0.43
165
1.8
21.1
80
19.2
40
23.0
94
52
0.43
170
2.0
21.6
81
18.1
44
23.2
89
57
0.42
174
4.0
23.0
97
11.9
48
24.6
135
48
0.40
-150
6.0
24.0
130
5.9
36
25.2
136
36
0.37
-124
Pin (dBm)
Figure 20. Swept Power Tuned for
Max P1dB
VDS =4V, IDSQ = 80 mA, 2 GHz.
P
out
(dBm),
G
(dB),
PAE
(%)
70
60
50
40
30
20
10
0
-10
-20
-40
-30
-10
-20
10
20
0
Pout
Gain
PAE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF331M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
| ATF-331M4-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-331M4-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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