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参数资料
| 型号： | ATF-34143-TR1G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 11/15页 |
| 文件大小： | 258K |
| 代理商： | ATF-34143-TR1G |
5
ATF-34143 Typical Performance Curves, continued
Note:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
Figure 19. P1dB vs. IDS Active Bias Tuned for min NF @
4V, 60 mA at 900 MHz.
FREQUENCY (MHz)
Figure 15. P1dB, IP3 vs. Frequencyand Temperature at VDS
=4V,IDS=60 mA.[1]
P1
dB
,O
IP
3(
dB
m
)
0
2000
4000
6000
8000
33
31
29
27
25
23
21
19
17
85 C
25 C
-40 C
OIP3
P1dB
IDSQ (mA)
Figure 16. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and
3.9 GHz Tuned for Noise Figure.[1]
GA
IN
(d
B)
,O
P1
dB
,a
nd
OI
P3
(d
Bm
)
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
120
60
140
Gain
OP1dB
OIP3
NF
35
30
25
20
15
10
5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
IDSQ (mA)
Figure 17. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and
5.8 GHz Tuned for Noise Figure.[1]
GA
IN
(d
B)
,O
P1
dB
,a
nd
OI
P3
(d
Bm
)
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
120
60
Gain
OP1dB
OIP3
NF
30
27
24
21
18
15
12
9
6
3
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequencyand Temperature
at VDS=4V,IDS=60 mA.
G a
(d
B)
0
2000
4000
6000
8000
25
20
15
10
NF
(d
B)
1.5
1.0
0.5
0
85 C
25 C
-40 C
IDS (mA)
Figure 18. P1dB vs. IDS Active Bias Tuned for NF @ 4V, 60
mA at 2 GHz.
P 1
dB
(d
Bm
)
0
100
50
150
25
20
15
10
5
0
-5
3 V
4 V
IDS (mA)
P 1
dB
(d
Bm
)
0
100
50
150
25
20
15
10
5
0
-5
3 V
4 V
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF34143TR2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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