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参数资料
| 型号： | ATF-34143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SOT-343, 4 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 97K |
| 代理商： | ATF-34143-TR2 |
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-34143
Features
Low Noise Figure
Excellent Uniformity in
Product Specifications
Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging
Option Available
Specifications
1.9 GHz; 4 V, 60 mA (Typ.)
0.5 dB Noise Figure
17.5 dB Associated Gain
20 dBm Output Power at
1 dB Gain Compression
31.5 dBm Output 3rd Order
Intercept
Applications
Low Noise Amplifier for
Cellular/PCS Base Stations
LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
Surface Mount Package
SOT-343
Description
Hewlett Packard’s ATF-34143 is a
high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Based on its featured perfor-
mance, ATF-34143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
Pin Connections and
Package Marking
Note:
Top View. Package marking
provides orientation and identification.
“4P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
GATE
4Px
SOURCE
DRAIN
SOURCE
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF-35143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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