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参数资料
| 型号： | ATF-34143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SOT-343, 4 PIN |
| 文件页数： | 8/14页 |
| 文件大小： | 97K |
| 代理商： | ATF-34143-TR2 |
3
ATF-34143 Electrical Specifications
T
A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units
Min.
Typ.[2]
Max.
Idss[1]
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
90
118
145
VP[1]
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-0.65
- 0.5
-0.35
Id
Quiescent Bias Current
VGS = 0.34 V, VDS = 4 V
mA
—
60
—
gm[1]
Transconductance
VDS = 1.5 V, gm = Idss /VP
mmho
180
230
—
IGDO
Gate to Drain Leakage Current
VGD = 5 V
A
500
Igss
Gate Leakage Current
VGD = VGS = -4 V
A
—
30
300
NF
Noise Figure
f = 2 GHz
VDS = 4 V, IDS = 60 mA
dB
0.5
0.8
VDS = 4 V, IDS = 30 mA
0.5
f = 900 MHz
VDS = 4 V, IDS = 60 mA
dB
0.4
Ga
Associated Gain
f = 2 GHz
VDS = 4 V, IDS = 60 mA
dB
16
17.5
19
VDS = 4 V, IDS = 30 mA
17
f = 900 MHz
VDS = 4 V, IDS = 60 mA
dB
21.5
OIP3
Output 3rd Order
f = 2 GHz
VDS = 4 V, IDS = 60 mA
dBm
29
31.5
Intercept Point [3] +5 dBm Pout /Tone
VDS = 4 V, IDS = 30 mA
30
f = 900 MHz
VDS = 4 V, IDS = 60 mA
dBm
31
+5 dBm Pout /Tone
P1dB
1 dB Compressed
f = 2 GHz
VDS = 4 V, IDS = 60 mA
dBm
20
Intercept Point [3]
VDS = 4 V, IDS = 30 mA
19
f = 900 MHz
VDS = 4 V, IDS = 60 mA
dBm
18.5
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Using production test board.
Figure 5. Block diagram of 2 GHz producution test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit
losses. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF-35143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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