参数资料
型号: ATF-34143-TR2
元件分类: 小信号晶体管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: PLASTIC, SOT-343, 4 PIN
文件页数: 2/14页
文件大小: 97K
代理商: ATF-34143-TR2
10
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
Freq.
Fmin
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.11
0.84
15
0.14
24.5
0.9
0.14
0.78
30
0.12
20.7
1.0
0.15
0.77
34
0.12
20.2
1.5
0.20
0.69
53
0.10
18.5
1.8
0.23
0.66
62
0.10
17.7
2.0
0.26
0.62
72
0.09
17.2
2.5
0.33
0.55
91
0.07
16.3
3.0
0.39
0.50
111
0.05
15.4
4.0
0.53
0.43
149
0.03
13.7
5.0
0.67
0.39
-173
0.04
12.3
6.0
0.81
0.39
-137
0.07
11.1
7.0
0.96
0.42
-104
0.14
10.0
8.0
1.10
0.47
-76
0.26
9.2
9.0
1.25
0.54
-53
0.41
8.6
10.0
1.39
0.62
-37
0.60
8.2
ATF-34143 Typical Scattering Parameters, V
DS = 4 V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.95
-41
21.91
12.454
150
-31.06
0.028
68
0.29
-41
26.48
0.8
0.89
-65
21.33
11.654
134
-28.18
0.039
57
0.24
-67
24.75
1.0
0.85
-83
20.46
10.549
123
-26.56
0.047
49
0.23
-84
23.51
1.5
0.78
-111
18.74
8.646
103
-24.44
0.060
38
0.21
-114
21.59
1.8
0.75
-122
17.92
7.873
95
-23.74
0.065
33
0.21
-125
20.83
2.0
0.73
-133
17.16
7.207
87
-23.22
0.069
29
0.20
-136
20.19
2.5
0.69
-151
15.78
6.149
73
-22.38
0.076
22
0.19
-155
19.08
3.0
0.67
-168
14.56
5.345
60
-21.62
0.083
15
0.19
-171
18.09
4.0
0.64
161
12.53
4.232
37
-20.54
0.094
3
0.18
162
16.53
5.0
0.63
134
10.88
3.501
16
-19.58
0.105
-10
0.19
135
15.23
6.0
0.64
111
9.49
2.983
-5
-18.79
0.115
-24
0.21
109
12.89
7.0
0.66
86
8.15
2.557
-26
-18.27
0.122
-38
0.24
84
11.22
8.0
0.69
65
6.92
2.217
-46
-17.79
0.129
-51
0.28
62
10.21
9.0
0.73
46
5.72
1.932
-65
-17.46
0.134
-65
0.33
42
9.36
10.0
0.76
28
4.73
1.723
-84
-16.95
0.142
-79
0.38
25
8.94
11.0
0.78
9
3.70
1.531
-104
-16.71
0.146
-94
0.42
7
8.23
12.0
0.81
-11
2.57
1.344
-124
-16.71
0.146
-111
0.47
-12
7.56
13.0
0.84
-30
1.20
1.148
-143
-17.02
0.141
-126
0.52
-29
6.94
14.0
0.86
-44
-0.12
0.986
-159
-17.46
0.134
-139
0.58
-43
6.37
15.0
0.87
-56
-1.21
0.870
-175
-17.59
0.132
-150
0.62
-58
5.78
16.0
0.86
-72
-2.21
0.775
168
-17.59
0.132
-163
0.65
-71
4.60
17.0
0.86
-88
-3.35
0.680
151
-17.65
0.131
-178
0.68
-86
3.79
18.0
0.89
-101.99
-4.81
0.575
135
-18.42
0.120
169
0.71
-104
3.33
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|
2 vs.
Frequency at 4 V, 60 mA.
MSG/MAG
and
S
21
(dB)
04
2
8
14
16
10
12
618
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
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