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参数资料
| 型号： | ATF-34143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 3/15页 |
| 文件大小： | 273K |
| 代理商： | ATF-34143-TR2 |
11
Noise Parameter Applications Information
Fminvaluesat2GHzandhigherarebasedonmeasure-
mentswhiletheFminsbelow2GHzhavebeenextrapo-
lated.TheFminvaluesarebasedonasetof16noisefigure
measurementsmadeat16differentimpedancesusingan
ATNNP5testsystem.Fromthesemeasurements,atrue
Fminiscalculated.Fminrepresentsthetrueminimumnoise
figureofthedevicewhenthedeviceispresentedwithan
impedancematchingnetworkthattransformsthesource
impedance,typically50,toanimpedancerepresented
bythereflectioncoefficientΓo.Thedesignermustdesign
amatchingnetworkthatwillpresentΓotothedevicewith
minimalassociatedcircuitlosses.Thenoisefigureofthe
completedamplifierisequaltothenoisefigureofthe
deviceplusthelossesofthematchingnetworkpreceding
thedevice.ThenoisefigureofthedeviceisequaltoFmin
onlywhenthedeviceispresentedwithΓo.Ifthereflection
coefficientofthematchingnetworkisotherthanΓo,then
thenoisefigureofthedevicewillbegreaterthanFmin
basedonthefollowingequation.
NF=Fmin+4Rn|Γs–Γo|2
Zo(|1+Γo|2)(1–Γs|2)
WhereRn/Zoisthenormalizednoiseresistance,Γoisthe
optimumreflectioncoefficientrequiredtoproduceFmin
andΓsisthereflectioncoefficientofthesourceimped-
anceactuallypresentedtothedevice.Thelossesofthe
matchingnetworksarenon-zeroandtheywillalsoadd
tothenoisefigureofthedevicecreatingahigherampli-
fier noise figure. The losses of the matching networks
arerelatedtotheQofthecomponentsandassociated
printedcircuitboardloss.Γoistypicallyfairlylowathigher
frequenciesandincreasesasfrequencyislowered.Larger
gatewidthdeviceswilltypicallyhavealowerΓoascom-
paredtonarrowergatewidthdevices.
TypicallyforFETs,thehigherΓousuallyinfersthatanim-
pedancemuchhigherthan50isrequiredforthedevice
to produce Fmin. AtVHF frequencies and even lower L
Bandfrequencies,therequiredimpedancecanbeinthe
vicinity of several thousand ohms. Matching to such a
highimpedancerequiresveryhi-Qcomponentsinorder
to minimize circuit losses. As an example at 900 MHz,
whenairwwoundcoils(Q>100)areusedformatching
networks,thelosscanstillbeupto0.25dBwhichwilladd
directlytothenoisefigureofthedevice.Usingmuiltilayer
moldedinductorswithQsinthe30to50rangeresults
inadditionallossovertheairwoundcoil.Lossesashigh
as0.5dBorgreateraddtothetypical0.15dBFminofthe
devicecreatinganamplifiernoisefigureofnearly0.65dB.
Adiscussionconcerningcalculatedandmeasuredcircuit
lossesandtheireffectonamplifiernoisefigureiscovered
inAvagoApplication1085.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF-35143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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