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参数资料
| 型号： | ATF-34143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 9/15页 |
| 文件大小： | 273K |
| 代理商： | ATF-34143-TR2 |
3
ATF-34143 Electrical Specifications
TA=25°C,RFparametersmeasuredinatestcircuitforatypicaldevice
Symbol
Parameters and Test Conditions
Units
Min.
Typ.[2]
Max.
Idss[1]
SaturatedDrainCurrent
VDS=1.5V,VGS=0V
mA
90
118
145
VP[1]
PinchoffVoltage
VDS=1.5V,IDS=10%ofIdss
V
-0.65
-0.5
-0.35
Id
QuiescentBiasCurrent
VGS=-0.34V,VDS=4V
mA
—
60
—
gm[1]
Transconductance
VDS=1.5V,gm=Idss/VP mmho
180
230
—
IGDO
GatetoDrainLeakageCurrent
VGD=5V
A
500
Igss
GateLeakageCurrent
VGD=VGS=-4V
A
—
30
300
NF
NoiseFigure
f=2GHz
VDS=4V,IDS=60mA
dB
0.5
0.8
VDS=4V,IDS=30mA
0.5
f=900MHz
VDS=4V,IDS=60mA
dB
0.4
Ga
AssociatedGain
f=2GHz
VDS=4V,IDS=60mA
dB
16
17.5
19
VDS=4V,IDS=30mA
17
f=900MHz
VDS=4V,IDS=60mA
dB
21.5
OIP3
Output3rdOrder
f=2GHz
VDS=4V,IDS=60mA
dBm
29
31.5
InterceptPoint[3]
+5dBmPout/Tone
VDS=4V,IDS=30mA
30
f=900MHz
VDS=4V,IDS=60mA
dBm
31
+5dBmPout/Tone
P1dB
1dBCompressed
f=2GHz
VDS=4V,IDS=60mA
dBm
20
InterceptPoint[3]
VDS=4V,IDS=30mA
19
f=900MHz
VDS=4V,IDS=60mA
dBm
18.5
Notes:
1. Guaranteedatwaferprobelevel
2. Typicalvaluedeterminedfromasamplesizeof450partsfrom9wafers.
3. Usingproductiontestboard.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.This circuit represents a trade-off
between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35143 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF-35143-BLK | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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