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参数资料
型号： ATF-50189-TR1
元件分类： 小信号晶体管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封装： LEAD FREE PACKAGE-3
文件页数： 10/21页
文件大小： 350K
代理商： ATF-50189-TR1
18
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Figure 38. MSG/MAG & |S21|
2 vs Frequency
at 3.5V/200 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2
(dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
-30
MSG
MAG
S21
ATF-50189 Typical Scattering Parameters at 25
°C, VDS = 3.5V, IDS = 200 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.927
-132.6
30.4
33.278
111.3
-37.1
0.014
30.8
0.713
-163.4
33.8
0.2
0.922
-158.4
25.0
17.839
97.4
-35.9
0.016
23.7
0.762
-173.1
30.5
0.3
0.921
-169.2
21.6
12.071
90.7
-35.4
0.017
23.1
0.773
-177.6
28.5
0.4
0.919
-176.0
19.2
9.101
86.0
-34.9
0.018
24.1
0.776
179.3
27.0
0.5
0.918
178.6
17.2
7.208
84.6
-34.9
0.018
28.0
0.780
175.7
26.0
0.6
0.919
174.6
15.6
6.036
82.0
-34.4
0.019
30.1
0.779
173.5
25.0
0.7
0.919
171.0
14.4
5.237
79.5
-33.6
0.021
32.0
0.780
171.4
24.0
0.8
0.920
167.6
13.3
4.637
76.9
-33.2
0.022
33.1
0.778
169.4
23.2
0.9
0.922
164.2
12.4
4.159
74.1
-32.4
0.024
34.0
0.779
167.4
22.4
1
0.923
161.1
11.5
3.778
71.4
-32.0
0.025
34.4
0.778
165.6
21.8
1.1
0.924
159.7
11.2
3.617
70.0
-31.7
0.026
34.4
0.779
164.7
21.4
1.2
0.924
158.2
10.8
3.455
68.5
-31.4
0.027
34.4
0.779
163.7
21.1
1.3
0.924
155.5
10.0
3.171
65.6
-31.1
0.028
34.1
0.778
161.9
20.5
1.4
0.921
152.6
9.4
2.936
62.8
-30.5
0.030
33.6
0.779
160.0
19.9
1.5
0.920
150.2
8.7
2.734
60.1
-30.2
0.031
33.3
0.779
158.2
19.5
1.6
0.923
147.6
8.1
2.554
57.2
-29.9
0.032
32.5
0.778
156.5
19.0
1.7
0.922
144.7
7.6
2.395
54.4
-29.4
0.034
31.7
0.779
154.6
18.1
1.8
0.922
142.1
7.0
2.248
51.8
-29.1
0.035
30.8
0.778
153.1
17.2
1.9
0.921
139.6
6.5
2.116
49.2
-28.9
0.036
29.7
0.778
151.4
16.5
2
0.921
137.1
6.0
1.994
46.5
-28.4
0.038
28.7
0.777
149.7
15.9
2.1
0.919
134.6
5.5
1.889
44.0
-28.2
0.039
27.4
0.778
148.0
15.3
2.2
0.920
132.0
5.1
1.792
41.3
-28.0
0.040
26.3
0.777
146.4
14.8
2.3
0.918
129.7
4.6
1.690
38.8
-27.7
0.041
25.1
0.777
145.1
14.3
2.4
0.914
127.1
4.2
1.618
36.4
-27.5
0.042
23.8
0.775
143.5
13.7
2.5
0.910
125.0
3.8
1.549
34.1
-27.3
0.043
22.8
0.792
141.8
13.3
3
0.909
112.7
1.8
1.226
22.1
-26.6
0.047
16.3
0.790
135.0
11.3
3.5
0.912
99.5
0.0
1.000
12.5
-26.0
0.050
10.7
0.796
131.2
9.8
4
0.923
92.6
-1.2
0.869
2.9
-25.7
0.052
5.2
0.801
122.7
9.1
5
0.922
78.2
-4.0
0.633
-18.0
-25.0
0.056
-7.1
0.812
102.1
6.7
6
0.921
61.3
-6.2
0.488
-39.4
-25.5
0.053
-24.3
0.823
84.0
5.0
7
0.921
41.2
-8.7
0.369
-57.1
-26.0
0.050
-41.5
0.822
69.2
2.9
8
0.922
24.3
-10.6
0.294
-76.8
-26.7
0.046
-58.0
0.854
53.9
1.9
9
0.923
11.8
-12.8
0.230
-97.3
-28.4
0.038
-75.9
0.890
36.3
1.2
10
0.922
10.8
-15.1
0.176
-105.0
-31.1
0.028
-84.6
0.901
26.6
-0.3
11
0.921
0.3
-16.1
0.156
-120.3
-34.4
0.019
-113.3
0.877
19.8
-1.7
12
0.924
-8.0
-17.9
0.128
-132.2
-44.4
0.006
-164.6
0.921
6.7
-1.2
13
0.923
-12.1
-19.2
0.110
-146.9
-39.2
0.011
75.2
0.881
-1.4
-4.2
14
0.922
-20.6
-20.8
0.091
-161.8
-36.5
0.015
34.4
0.885
-7.8
-6.0
15
0.925
-23.6
-20.8
0.091
-177.7
-38.4
0.012
-0.7
0.868
-19.5
-6.5
16
0.925
-23.1
-20.6
0.093
168.1
-37.7
0.013
-7.2
0.867
-26.6
-6.4
17
0.924
-24.3
-18.4
0.120
156.0
-41.9
0.008
-177.4
0.857
-34.0
-4.2
18
0.924
-32.5
-16.5
0.150
132.5
-34.9
0.018
158.2
0.833
-42.9
-2.5
相关PDF资料
PDF描述
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-501P8-BLKG S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相关代理商/技术参数
参数描述
ATF-50189-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF501P8 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
ATF-501P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-501P8-BLK 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-501P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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