- 您现在的位置：买卖IC网 > PDF目录42902 > ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 PDF资料下载
参数资料
| 型号： | ATF-50189-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 15/21页 |
| 文件大小： | 350K |
| 代理商： | ATF-50189-TR1 |
3
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Input
Output
Matching
Circuit
Γ_mag=0.62
Γ_ang=-163°
(0.9 dB loss)
Input
Matching
Circuit
Γ_mag=0.80
Γ_ang=-136.6°
(0.9 dB loss)
DUT
Notes:
1. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts [1,2]
Figure 2. OIP3 @ 2 GHz, 4.5V/280 mA.
LSL = 43.0, Nominal = 45.4
OIP3 (dBm)
FREQUENCY
43
47
44
45
46
150
120
90
60
30
0
Stdev=0.37
+3 Std
–3 Std
Figure 3. P1dB @ 2 GHz, 4.5V/280 mA.
LSL = 27.0, Nominal = 29.0
P1dB (dBm)
28
30
28.5
29
29.5
180
150
120
90
60
30
0
Stdev=0.20
+3 Std
–3 Std
FREQUENCY
Figure 4. Gain @ 2 GHz, 4.5V/200 mA.
LSL = 14.0, Nominal = 15.5, USL = 17.0
GAIN (dB)
14
17
14.5
15
15.5
16
16.5
300
250
200
150
100
50
0
Stdev=0.16
+3 Std
–3 Std
FREQUENCY
Figure 5. PAE at P1dB @ 2 GHz, 4.5V/200 mA.
LSL = 45.0, Nominal = 62.0
PAE (%)
54
70
58
62
66
150
120
90
60
30
0
Stdev=1.94
+3 Std
–3 Std
FREQUENCY
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-501P8-BLKG | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-50189-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF501P8 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
| ATF-501P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-501P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
发布紧急采购，3分钟左右您将得到回复。