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参数资料
型号： ATF-50189-TR1
元件分类： 小信号晶体管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封装： LEAD FREE PACKAGE-3
文件页数： 5/21页
文件大小： 350K
代理商： ATF-50189-TR1
13
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Figure 33. MSG/MAG & |S21|
2 vs Frequency
at 4.5V/360 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2
(dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
-30
MSG
MAG
S21
ATF-50189 Typical Scattering Parameters at 25
°C, VDS = 4.5V, IDS = 360 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.935
-134.4
29.1
28.363
110.9
-39.2
0.011
33.4
0.800
-171.2
34.1
0.2
0.932
-159.5
23.6
15.134
97.3
-37.7
0.013
28.3
0.838
-177.3
30.7
0.3
0.932
-170.1
20.2
10.222
90.8
-37.1
0.014
29.1
0.847
179.4
28.6
0.4
0.930
-176.6
17.7
7.696
86.2
-36.5
0.015
30.9
0.849
176.9
27.1
0.5
0.930
178.1
15.7
6.096
85.2
-35.9
0.016
35.4
0.854
174.0
25.8
0.6
0.931
174.2
14.2
5.107
82.8
-35.4
0.017
37.8
0.855
172.0
24.8
0.7
0.933
170.6
12.9
4.429
80.4
-34.4
0.019
39.7
0.855
170.0
23.7
0.8
0.933
167.2
11.9
3.919
77.9
-33.6
0.021
40.8
0.853
168.2
22.7
0.9
0.935
163.9
10.9
3.526
75.3
-33.2
0.022
41.5
0.858
166.3
22.0
1
0.936
160.7
10.1
3.2
72.6
-32.4
0.024
41.6
0.855
164.4
21.2
1.1
0.937
159.3
9.7
3.063
71.3
-32.0
0.025
41.5
0.855
163.4
20.9
1.2
0.938
157.8
9.3
2.925
69.9
-31.7
0.026
41.3
0.855
162.4
20.5
1.3
0.936
155.1
8.6
2.685
67.2
-31.1
0.028
40.8
0.852
160.7
19.8
1.4
0.933
152.3
7.9
2.488
64.4
-30.8
0.029
40.0
0.857
158.9
19.3
1.5
0.933
151.1
7.6
2.401
63.2
-30.5
0.03
39.7
0.857
158.0
19.0
1.6
0.932
149.8
7.3
2.314
61.9
-30.2
0.031
39.3
0.856
157.0
18.7
1.7
0.934
147.2
6.7
2.163
59.1
-29.6
0.033
38.2
0.854
155.2
18.1
1.8
0.934
144.3
6.2
2.032
56.4
-29.4
0.034
37.0
0.855
153.4
17.1
1.9
0.933
141.7
5.6
1.906
53.9
-28.9
0.036
35.8
0.854
151.8
16.4
2
0.932
139.3
5.1
1.794
51.3
-28.6
0.037
34.5
0.853
150.0
15.8
2.1
0.933
136.7
4.6
1.69
48.8
-28.4
0.038
33.2
0.851
148.4
15.2
2.2
0.930
134.2
4.1
1.6
46.4
-28.0
0.04
31.8
0.852
146.6
14.6
2.3
0.931
131.6
3.7
1.523
44.0
-27.7
0.041
30.5
0.851
145.0
14.2
2.4
0.929
129.2
3.2
1.442
41.7
-27.5
0.042
29.0
0.853
143.3
13.7
2.5
0.924
126.7
2.7
1.371
39.2
-27.1
0.044
27.5
0.845
142.1
13.0
3
0.917
114.6
0.7
1.09
27.7
-26.4
0.048
20.1
0.855
134.5
11.1
3.5
0.911
102.2
-1.1
0.886
18.3
-25.7
0.052
13.6
0.874
129.8
9.6
4
0.921
93.1
-2.3
0.771
9.1
-25.5
0.053
6.8
0.894
121.3
9.1
5
0.922
79.3
-4.9
0.569
-10.0
-24.9
0.057
-7.3
0.912
101.1
7.2
6
0.921
64.3
-7.1
0.441
-30.0
-24.6
0.059
-28.5
0.929
85.8
6.3
7
0.921
43.0
-9.4
0.337
-46.5
-25.8
0.051
-40.6
0.863
68.4
2.8
8
0.922
25.9
-11.3
0.273
-65.6
-26.6
0.047
-57.3
0.875
53.0
1.6
9
0.922
13.2
-13.0
0.225
-84.2
-28.2
0.039
-76.1
0.914
35.5
1.5
10
0.921
11.7
-15.3
0.171
-93.0
-31.1
0.028
-84.5
0.935
26.0
0.7
11
0.921
0.8
-16.2
0.155
-106.9
-33.6
0.021
-111.9
0.899
19.0
-1.2
12
0.923
-7.6
-17.1
0.139
-117.3
-43.1
0.007
-160.6
0.954
7.2
1.7
13
0.923
-10.9
-18.3
0.122
-130.6
-39.2
0.011
77.1
0.901
-1.6
-2.4
14
0.922
-20.2
-19.2
0.11
-150.3
-36.5
0.015
31.3
0.897
-8.1
-3.8
15
0.925
-23.6
-19.0
0.112
-172.7
-37.7
0.013
-5.0
0.884
-20.3
-4.2
16
0.924
-21.8
-19.4
0.107
165.1
-39.2
0.011
-3.4
0.873
-27.6
-5.0
17
0.924
-24.0
-18.1
0.124
147.9
-39.2
0.011
-175.1
0.865
-35.4
-3.6
18
0.923
-31.6
-17.3
0.136
127.1
-33.2
0.022
153.4
0.830
-43.4
-3.5
相关PDF资料
PDF描述
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-501P8-BLKG S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相关代理商/技术参数
参数描述
ATF-50189-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF501P8 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
ATF-501P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-501P8-BLK 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-501P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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