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参数资料
| 型号： | ATF-52189-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 11/18页 |
| 文件大小： | 2247K |
| 代理商： | ATF-52189-TR1 |
2
ATF-52189 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
ds
Drain–Source Voltage[2]
V7
V
gs
Gate–Source Voltage[2]
V
-5 to 1.0
V
gd
Gate Drain Voltage[2]
V
-5 to 1.0
I
ds
Drain Current[2]
mA
500
I
gs
Gate Current
mA
46
P
diss
Total Power Dissipation[3]
W
1.5
P
in max.
RF Input Power
dBm
+27
T
ch
Channel Temperature
°C
150
T
stg
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C.
Derate 19.25 mW/
°C for T
B > 72°C.
4. Channel-to-board thermal resistance
measured using 150
°C Liquid Crystal
Measurement method.
ATF-52189 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 200 mA
V
—
0.62
—
Vth
Threshold Voltage
Vds = 4.5V, Ids = 16 mA
V
—
0.28
—
Ids
Drain to Source Current
Vds = 4.5V, Vgs = 0V
A
—
14.8
—
Gm
Transconductance
Vds = 4.5V, Gm =
Ids/Vgs;
mmho
—
1300
—
Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
A
-20.0
0.49
—
NF
Noise Figure
f = 2 GHz
dB
—
1.50
—
f = 900 MHz
dB
—
1.25
—
G
Gain [1]
f = 2 GHz
dB
14.8
16.0
17.8
f = 900 MHz
dB
—
16.5
—
OIP3
Output 3rd Order Intercept Point [1]
f = 2 GHz
dBm
38.5
42.0
—
f = 900 MHz
dBm
—
42.0
—
P1dB
Output 1dB Compressed[1]
f = 2 GHz
dBm
25.5
27.0
—
f = 900 MHz
dBm
—
27.2
—
PAE
Power Added Efficiency
f = 2 GHz
%
40.0
55.0
—
f = 900 MHz
%
—
50.0
—
NF
Noise Figure
f=900 MHz
dB
—
1.25
—
f=2.0 GHz
dB
—
1.50
—
f=2.4 GHz
dB
—
1.60
—
G
Gain [1]
f=900 MHz
dB
—
16.5
—
f=2.0 GHz
dB
14.8
16.0
17.8
f=2.4 GHz
dB
—
13.5
—
OIP3
Output 3rd Order Intercept Point[1]
f=900 MHz
dBm
—
42.0
—
f=2.0 GHz
dBm
38.5
42.0
—
f=2.4 GHz
dBm
—
41.0
—
P1dB
Output 1dB Compressed[1]
f=900 MHz
dBm
—
27.2
—
f=2.0 GHz
dBm
25.5
27.0
—
f=2.4 GHz
dBm
—
26.0
Thermal Resistance[2,4]
θ
ch-b = 52°C/W
continued on next page
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