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参数资料
| 型号： | ATF-52189-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 15/18页 |
| 文件大小： | 2247K |
| 代理商： | ATF-52189-TR1 |
6
ATF-52189 Typical Performance Curves (at 25
°C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.5V, Ids = 200 mA.
Figure 16. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 3V and Frequency = 2 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 17. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Frequency = 2 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 18. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4.5V and Frequency = 2 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
Gain_4.5V
Pout_4.5V
PAE_4.5V
Figure 19. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 3V and Frequency = 3.9 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
Gain_3V
Pout_3V
PAE_3V
Figure 20. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4V and Frequency = 3.9 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4V
Pout_4V
PAE_4V
Figure 21. Small Signal Gain/Pout/PAE vs.
Pin at Vds = 4.5V and Frequency = 3.9 GHz.
Pin (dBm)
GAIN
(dB)
&
Pout
(dBm)
PAE
(%)
-10
18
-6
-2
2
6
10
14
30
25
20
15
10
5
0
60
50
40
30
20
10
0
Gain_4.5V
Pout_4.5V
PAE_4.5V
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase depending
on amount of RF drive.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-52189-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-521P8 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
| ATF-521P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-521P8-BLKG | 制造商:Avago Technologies 功能描述: |
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