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参数资料
| 型号： | ATF-521P8-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封装： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件页数： | 22/23页 |
| 文件大小： | 319K |
| 代理商： | ATF-521P8-TR1 |
8
ATF-521P8 Typical Performance Curves, continued (at 25°C unless specified otherwise)
Tuned for Optimal P1dB
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
Figure 33. PAE @ P1dB vs. Idq and Vds
at 2 GHz.
Idq (mA)
PAE
(%)
60
55
50
45
40
35
30
25
20
100
400
350
200
150
300
250
4.5V
4V
3V
Idq (mA)
PAE
(%)
55
50
45
40
35
30
25
20
100
400
350
200
150
300
250
Figure 34. PAE @ P1dB vs. Idq and Vds
at 900 MHz.
4.5V
4V
3V
Figure 35. PAE @ P1dB vs. Idq and Vds
at 3.9 GHz.
Idq (mA)
PAE
(%)
40
35
30
25
20
100
400
200
150
300
350
250
4.5V
4V
3V
Figure 36. OIP3 vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA.
FREQUENCY (GHz)
OIP3
(dBm)
50
45
40
35
30
25
20
15
0.5
4
3.5
1.5
1
2.5
3
2
85
°C
25
°C
-40
°C
Figure 38. Gain vs. Temp and Freq
tuned for optimal P1dB at 4.5V, 200 mA.
FREQUENCY (GHz)
GAIN
(dB)
20
15
10
5
0
0.5
4
3.5
1.5
1
2.5
3
2
85
°C
25
°C
-40
°C
Figure 39. PAE vs Temp and Freq
tuned for optimal P1dB at 4.5V.
FREQUENCY (GHz)
PAE
(%)
60
50
40
30
20
10
0
0.5
4
85
°C
25
°C
-40
°C
3.5
1.5
1
2.5
3
2
Figure 37. P1dB vs. Temp and Freq
(tuned for optimal P1dB at 4.5V, 200 mA).
FREQUENCY (GHz)
P1dB
(dBm)
32
30
28
26
24
22
20
0.5
4
3.5
1.5
1
2.5
3
2
85
°C
25
°C
-40
°C
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-521P8-BLK | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-53189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-53189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-521P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF524S16M | 制造商:n/a 功能描述:Inverter Semiconductor |
| ATF-53189 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| ATF-53189-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-53189-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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