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参数资料
| 型号： | ATP216-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 35A ATPAK |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 35A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 18A，4.5V |
| 闸电荷(Qg) @ Vgs： | 30nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2700pF @ 20V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | ATPAK（2 引线 + 接片） |
| 供应商设备封装： | ATPAK |
| 包装： | 带卷 (TR) |
Ordering number : EN8985A
ATP216
N-Channel Power MOSFET
50V, 35A, 23m Ω , Single ATPAK
Features
http://onsemi.com
?
?
?
ON-resistance RDS(on)1=17m Ω (typ.)
1.8V drive
Protection diode in
?
?
Slim package
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
50
±10
35
Unit
V
V
A
Drain Current (PW ≤ 10 μ s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
105
40
150
--55 to +150
40
17.5
A
W
° C
° C
mJ
A
Note : * 1 VDD=10V, L=100 μ H, IAV=18A
* 2 L ≤ 100 μ H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP216-TL-H
Product & Package Information
? Package : ATPAK
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
6.5
1.5
4.6
Packing Type: TL
Marking
2.6
4
0.4
0.4
ATP216
LOT No.
TL
Electrical Connection
2,4
1
2
3
0.55
0.8
0.6
0.4
1 : Gate
2.3
2.3
2 : Drain
3 : Source
1
4 : Drain
Semiconductor Components Industries, LLC, 2013
July, 2013
ATPAK
3
62012 TKIM/51111PA TKIM TC-00002591 No.8985-1/7
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相关代理商/技术参数 |
参数描述 |
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| ATP218 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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| ATP218-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ATP22 | 制造商:AMERICAN DJ 功能描述:STACKABLE EQUIPMENT CASE 22 X 12 X 15 INCH |
| ATP-22 | 制造商:American DJ 功能描述:Arriba Cases Stacking Equipment Padded Bag - 22'' x 12'' x 15'' |
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